Design and simulation of a high efficiency CdS/CdTe solar cell

IE Tinedert, F Pezzimenti, ML Megherbi, A Saadoune - Optik, 2020 - Elsevier
A thin film solar cell based on cadmium telluride (CdTe) has been investigated by means of
an accurate numerical simulation study. To optimize the design in terms of power conversion …

Electron trap** effects in SiC Schottky diodes: Review and comment

JR Nicholls - Microelectronics Reliability, 2021 - Elsevier
SiC devices exhibit a number of detrimental second order effects which are caused by
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …

TCAD parameters for 4H-SiC: A review

J Burin, P Gaggl, S Waid, A Gsponer… - ar** effects on the electrical characteristics of a 4H silicon
carbide (4H-SiC) metal–oxide–semiconductor field effect transistor (MOSFET) dimensioned …

An ultrafast multi-layer Graphene/InGaAs/InAlAs/InAs PIN photodetector with 100 GHz bandwidth

M Khaouani, H Bencherif, Z Kourdi, L Dehimi… - Optik, 2021 - Elsevier
In recent years, the data traffic has grown exponentially and the forecasts indicate a huge
market that could be addressed by optoelectronics. However, the processing capacity …

[HTML][HTML] An efficient 4H-SiC photodiode for UV sensing applications

ML Megherbi, H Bencherif, L Dehimi, ED Mallemace… - Electronics, 2021 - mdpi.com
In this paper, we report experimental findings on a 4H-SiC-based pin photodiode. The
fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a …

Simulation analysis of a high efficiency GaInP/Si multijunction solar cell

M Benaicha, L Dehimi, F Pezzimenti… - Journal of …, 2020 - iopscience.iop.org
The solar power conversion efficiency of a gallium indium phosphide (GaInP)/silicon (Si)
tandem solar cell has been investigated by means of a physical device simulator …