Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

T Leydecker, M Herder, E Pavlica, G Bratina… - Nature …, 2016 - nature.com
Organic nanomaterials are attracting a great deal of interest for use in flexible electronic
applications such as logic circuits, displays and solar cells. These technologies have …

Enhanced precision through multiple reads for LDPC decoding in flash memories

J Wang, K Vakilinia, TY Chen… - IEEE Journal on …, 2014 - ieeexplore.ieee.org
Multiple reads of the same Flash memory cell with distinct word-line voltages provide
enhanced precision for LDPC decoding. In this paper, the word-line voltages are optimized …

Achieving near-zero read retry for 3d nand flash memory

M Ye, Q Li, Y Lv, J Zhang, T Ren, D Wen… - Proceedings of the 29th …, 2024 - dl.acm.org
As the flash-based storage devices age with program/erase (P/E) cycles, they require an
increasing number of read retries for error correction, which in turn deteriorates their read …

Minimum Pearson distance detection for multilevel channels with gain and/or offset mismatch

KAS Immink, JH Weber - IEEE Transactions on Information …, 2014 - ieeexplore.ieee.org
The performance of certain transmission and storage channels, such as optical data storage
and nonvolatile memory (flash), is seriously hampered by the phenomena of unknown offset …

Shaving retries with sentinels for fast read over high-density 3D flash

Q Li, M Ye, Y Cui, L Shi, X Li, TW Kuo… - 2020 53rd Annual IEEE …, 2020 - ieeexplore.ieee.org
High-density flash-memory chips are under tremendous demands with the exponential
growth of data. At the same time, the slow read performance of these high-density flash …

Read and write voltage signal optimization for multi-level-cell (MLC) NAND flash memory

CA Aslam, YL Guan, K Cai - IEEE transactions on …, 2016 - ieeexplore.ieee.org
The multi-level-cell (MLC) NAND flash channel exhibits nonstationary behavior over
increasing program and erase (PE) cycles and data retention time. In this paper, an …

Exploiting error characteristic to optimize read voltage for 3-D NAND flash memory

M Zhang, F Wu, Q Yu, W Liu, Y Wang… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
3-D NAND flash memory has become increasingly popular nonvolatile storage devices due
to large capacity and high performance. With the increase of program/erase (P/E) cycles and …

High-density image storage using approximate memory cells

Q Guo, K Strauss, L Ceze, HS Malvar - ACM SIGPLAN Notices, 2016 - dl.acm.org
This paper proposes tailoring image encoding for an approximate storage substrate. We
demonstrate that indiscriminately storing encoded images in approximate memory …

Deep learning-aided dynamic read thresholds design for multi-level-cell flash memories

Z Mei, K Cai, X He - IEEE Transactions on Communications, 2020 - ieeexplore.ieee.org
The practical NAND flash memory suffers from various non-stationary noises that are difficult
to be predicted. For example, the data retention noise induced channel offset is unknown …

Optimal data placement for heterogeneous cache, memory, and storage systems

L Zhang, R Karimi, I Ahmad, Y Vigfusson - Proceedings of the ACM on …, 2020 - dl.acm.org
New memory technologies are blurring the previously distinctive performance characteristics
of adjacent layers in the memory hierarchy. No longer are such layers orders of magnitude …