III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Semiconductor nanowires have recently emerged as a new class of materials with
significant potential to reveal new fundamental physics and to propel new applications in …

Photovoltaics based on nanowire arrays could reduce cost and materials consumption
compared with planar devices but have exhibited low efficiency of light absorption and …

Controlling the crystallographic phase purity of III− V nanowires is notoriously difficult, yet
this is essential for future nanowire devices. Reported methods for controlling nanowire …

The structural and optical properties of three different kinds of GaAs nanowires with 100%
zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety …

While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also
form wurtzite crystals under pressure or when grown as nanowhiskers. This makes …

We report a systematic study of the relationship between crystal quality and electrical
properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from …

Polarization-dependent Raman scattering experiments realized on single GaAs nanowires
with different percentages of zinc-blende and wurtzite structure are presented. The selection …

We report on the ultraclean emission from single quantum dots embedded in pure wurtzite
nanowires. Using a two-step growth process combining selective-area and vapor–liquid …

Using transient terahertz photoconductivity measurements, we have made noncontact, room
temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP …