Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review

DS Tang, BY Cao - International Journal of Heat and Mass Transfer, 2023 - Elsevier
The heat dissipation issue has now become one of the most important bottlenecks for power
electronics due to the rapid increase in power density and working frequency. Towards the …

Near-junction thermal managements of electronics

YC Hua, Y Shen, ZL Tang, DS Tang, X Ran… - Advances in Heat …, 2023 - Elsevier
Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …

Unlocking phonon properties of a large and diverse set of cubic crystals by indirect bottom-up machine learning approach

A Rodriguez, C Lin, C Shen, K Yuan… - Communications …, 2023 - nature.com
Although first principles based anharmonic lattice dynamics is one of the most common
methods to obtain phonon properties, such method is impractical for high-throughput search …

Machine learning interatomic potential developed for molecular simulations on thermal properties of β-Ga2O3

YB Liu, JY Yang, GM **n, LH Liu, G Csányi… - The Journal of …, 2020 - pubs.aip.org
The thermal properties of β-Ga 2 O 3 can significantly affect the performance and reliability
of high-power electronic devices. To date, due to the absence of a reliable interatomic …

Screening outstanding mechanical properties and low lattice thermal conductivity using global attention graph neural network

J Ojih, A Rodriguez, J Hu, M Hu - Energy and AI, 2023 - Elsevier
Mechanical and thermal properties of materials are extremely important for various
engineering and scientific fields such as energy conversion and energy storage. However …

Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method

Y Shen, HA Yang, BY Cao - International Journal of Heat and Mass …, 2023 - Elsevier
Accurate thermal simulation is essential for the near-junction thermal management and
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …

Epitaxial lift-off of flexible GaN-based HEMT arrays with performances optimization by the piezotronic effect

X Chen, J Dong, C He, L He, Z Chen, S Li, K Zhang… - Nano-Micro Letters, 2021 - Springer
High-electron-mobility transistors (HEMTs) are a promising device in the field of radio
frequency and wireless communication. However, to unlock the full potential of HEMTs, the …

Phase‐dependent phonon heat transport in nanoscale gallium oxide thin films

X **ao, Y Mao, B Meng, G Ma, K Hušeková, F Egyenes… - Small, 2024 - Wiley Online Library
Different phases of Ga2O3 have been regarded as superior platforms for making new‐
generation high‐performance electronic devices. However, understanding of thermal …

Bias dependence of non-Fourier heat spreading in GaN HEMTs

Y Shen, XS Chen, YC Hua, HL Li… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …

High-throughput computational discovery of 3218 ultralow thermal conductivity and dynamically stable materials by dual machine learning models

J Ojih, C Shen, A Rodriguez, H Zhang… - Journal of Materials …, 2023 - pubs.rsc.org
Materials with ultralow lattice thermal conductivity (LTC) continue to be of great interest for
technologically important applications such as thermal insulators and thermoelectrics. We …