An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …

An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …

Disclosed is a semiconductor device capable of functioning as a memory device. The
memory device comprises a plurality of memory cells, and each of the memory cells contains …

An object of an embodiment of the present invention is to manufacture a semiconductor
device with high display qual ity and high reliability, which includes a pixel portion and a …

An oxide semiconductor layer which is intrinsic or Substan tially intrinsic and includes a
crystalline region in a surface portion of the oxide semiconductor layer is used for the tran …

The threshold voltage is shifted in a negative or positive direction in Some cases by an
unspecified factor in a manu facturing process of the thin film transistor. If the amount of shift …

US9213206B2 - Liquid crystal display device, semiconductor device, and electronic appliance
- Google Patents US9213206B2 - Liquid crystal display device, semiconductor device, and …

(57) ABSTRACT A semiconductor device includes an oxide semiconductor layer including a
crystalline region over an insulating Surface, a source electrode layer and a drain electrode …

(57) ABSTRACT A more convenient and highly reliable semiconductor device which has a
transistor including an oxide semiconductor with higher impact resistance used for a variety …

6,429,120 B1 8, 2002 Ahn et al. 7,656,491 B2 2/2010 Yamazaki et al. 6,433,842 B1 8, 2002
Kaneko 7,670.469 B2 3/2010 Ahn et al. 6,449,026 B1 9, 2002 Minet al. 7,674,650 B2 3/2010 …