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Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser
T He, S Liu, W Li, L Zhong, X Ma, C ** techniques: in situ do** by low
pressure metalorganic chemical vapor deposition, and thermal diffusion from a Zn …
pressure metalorganic chemical vapor deposition, and thermal diffusion from a Zn …
Comparing the dual-mode VCSEL in OM4-MMF and GI-SMF links for NRZ-OOK and 16-QAM-OFDM transmissions
A dual-mode (DM) vertical-cavity surface-emitting laser (VCSEL) is investigated for carrying
high-speed data transmission with either the non-return-zero on-off keying (NRZ-OOK) or …
high-speed data transmission with either the non-return-zero on-off keying (NRZ-OOK) or …
Si diffusion in GaAs and Si-induced interdiffusion in GaAs/AlAs superlattices
Various microscopic mechanisms for Si diffusion in GaAs and Si-induced interdiffusion in
GaAs/AlAs superlattices are investigated by ab initio molecular dynamics. The dominant …
GaAs/AlAs superlattices are investigated by ab initio molecular dynamics. The dominant …
Step structure and ordering in Zn-doped GaInP
GaInP grown on (001) substrates by organometallic vapor phase epitaxy is typically highly
ordered. The driving force is due to the [1̄10] oriented P dimers on the surface. There are …
ordered. The driving force is due to the [1̄10] oriented P dimers on the surface. There are …
Diffusion of zinc in gallium arsenide with the participation isovalent impurities
LB Karlina, AS Vlasov, BY Ber, DY Kazantsev - Journal of Crystal Growth, 2015 - Elsevier
The diffusion of Zn into GaAs in the presence of indium and phosphorus was studied. Zn
diffusion was performed from the gas phase in a hydrogen flow under isothermal conditions …
diffusion was performed from the gas phase in a hydrogen flow under isothermal conditions …
Using measurements of fill factor at high irradiance to deduce heterobarrier band offsets
Using a 2D device simulation tool, we examine the high irradiance behavior of a single
junction, GaAs concentrator cell as a function of the do** in the back surface confinement …
junction, GaAs concentrator cell as a function of the do** in the back surface confinement …
Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition
Y Zhao, Y Teng, JJ Miao, QH Wu, JJ Gao… - Chinese Physics …, 2020 - iopscience.iop.org
Mid-wavelength infrared planar photodiodes were demonstrated, in which both the epitaxy
growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed …
growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed …