Semiconducting transition metal oxides

S Lany - Journal of Physics: Condensed Matter, 2015 - iopscience.iop.org
Open shell transition metal oxides are usually described as Mott or charge transfer
insulators, which are often viewed as being disparate from semiconductors. Based on the …

Dilute do**, defects, and ferromagnetism in metal oxide systems

SB Ogale - Advanced materials, 2010 - Wiley Online Library
Over the past decade intensive research efforts have been carried out by researchers
around the globe on exploring the effects of dilute do** of magnetic impurities on the …

Discovery of quantitative electronic structure‐OER activity relationship in metal‐organic framework electrocatalysts using an integrated theoretical‐experimental …

J Zhou, Z Han, X Wang, H Gai, Z Chen… - Advanced Functional …, 2021 - Wiley Online Library
Develo** cost‐effective and high‐performance catalysts for oxygen evolution reaction
(OER) is essential to improve the efficiency of electrochemical conversion devices …

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs

S Lany, A Zunger - Physical Review B—Condensed Matter and Materials …, 2008 - APS
Contemporary theories of defects and impurities in semiconductors rely to a large extent on
supercell calculations within density-functional theory using the approximate local-density …

Defect tolerant semiconductors for solar energy conversion

A Zakutayev, CM Caskey, AN Fioretti… - The journal of …, 2014 - ACS Publications
Defect tolerance is the tendency of a semiconductor to keep its properties despite the
presence of crystallographic defects. Scientific understanding of the origin of defect …

High-Throughput Screening of Stable Single-Atom Catalysts in CO2 Reduction Reactions

R Qi, B Zhu, Z Han, Y Gao - Acs Catalysis, 2022 - ACS Publications
Single-atom catalysts (SACs) have been extensively applied in CO2 reduction reactions
(CO2RRs) due to their unique activity/selectivity and maximum atom efficiency. To form and …

Accurate prediction of defect properties in density functional supercell calculations

S Lany, A Zunger - Modelling and simulation in materials science …, 2009 - iopscience.iop.org
The theoretical description of defects and impurities in semiconductors is largely based on
density functional theory (DFT) employing supercell models. The literature discussion of …

Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors

S Lany, A Zunger - Physical Review B—Condensed Matter and Materials …, 2009 - APS
Acceptor-bound holes in oxides often localize asymmetrically at one out of several
equivalent oxygen ligands. Whereas Hartree-Fock (HF) theory overly favors such symmetry …

Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

YS Kim, M Marsman, G Kresse, F Tran, P Blaha - Physical Review B …, 2010 - APS
The band structures and effective masses of III-V semiconductors (InP, InAs, InSb, GaAs, and
GaSb) are calculated using the GW method, the Heyd, Scuseria, and Ernzerhof hybrid …

Origins of band-gap renormalization in degenerately doped semiconductors

A Walsh, JLF Da Silva, SH Wei - Physical Review B—Condensed Matter and …, 2008 - APS
Degenerate n-type do** of semiconductors results in optical band-gap widening through
occupation of the conduction band, which is partially offset by the so-called band-gap …