Defects with associated electron and nuclear spins in solid-state materials have a long
history relevant to quantum information science that goes back to the first spin echo …

Optically addressable solid-state spin defects are promising candidates for storing and
manipulating quantum information using their long coherence ground-state manifold; …

Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for
quantum information processing compatible with nanofabrication processes and device …

Color centers are point defects in crystals that can provide an optical interface to a long-lived
spin state for distributed quantum information processing applications. An outstanding …

In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …

Quantum technology has grown out of quantum information theory and now provides a
valuable tool that researchers from numerous fields can add to their toolbox of research …

This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC)
for quantum sensing of magnetic, electric fields, and temperature at the nano and …

In a generalization of the latest achievements in this field, and as a pattern of massive
applications, we present here the Jahn–Teller effect (JTE) and pseudo-JTE (PJTE) as …

Spin-active optical emitters in silicon carbide are excellent candidates toward the
development of scalable quantum technologies. However, efficient photon collection is …

Transform-limited photon emission from quantum emitters is essential for high-fidelity
entanglement generation. In this Letter, we report the coherent optical property of a single …