Surface chemistry and catalysis confined under two-dimensional materials
Two-dimensional (2D) materials are characterised by their strong intraplanar bonding but
weak interplanar interaction. Interfaces between neighboring 2D layers or between 2D …
weak interplanar interaction. Interfaces between neighboring 2D layers or between 2D …
[HTML][HTML] Graphene: synthesis and applications
Graphene, since the demonstration of its easy isolation by the exfoliation of graphite in 2004
by Novoselov, Geim and co-workers, has been attracting enormous attention in the scientific …
by Novoselov, Geim and co-workers, has been attracting enormous attention in the scientific …
Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide
J Zhao, P Ji, Y Li, R Li, K Zhang, H Tian, K Yu, B Bian… - Nature, 2024 - nature.com
Semiconducting graphene plays an important part in graphene nanoelectronics because of
the lack of an intrinsic bandgap in graphene. In the past two decades, attempts to modify the …
the lack of an intrinsic bandgap in graphene. In the past two decades, attempts to modify the …
[HTML][HTML] Production and processing of graphene and related materials
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …
and related materials (GRMs), as well as the key characterization procedures. We adopt …
Direct view of hot carrier dynamics in graphene
The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum
and plays a central role for many electronic and optoelectronic applications. Harvesting …
and plays a central role for many electronic and optoelectronic applications. Harvesting …
Interface characterization and control of 2D materials and heterostructures
Abstract 2D materials and heterostructures have attracted significant attention for a variety of
nanoelectronic and optoelectronic applications. At the atomically thin limit, the material …
nanoelectronic and optoelectronic applications. At the atomically thin limit, the material …
Origin of do** in quasi-free-standing graphene on silicon carbide
J Ristein, S Mammadov, T Seyller - Physical review letters, 2012 - APS
We explain the robust p-type do** observed for quasi-free-standing graphene on
hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism …
hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism …
Relation between interfacial shear and friction force in 2D materials
Understanding the interfacial properties between an atomic layer and its substrate is of key
interest at both the fundamental and technological levels. From Fermi level pinning to strain …
interest at both the fundamental and technological levels. From Fermi level pinning to strain …
High Electron Mobility in Epitaxial Graphene on 4H-SiC (0001) via post-growth annealing under hydrogen
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-
SiC (0001), grown by atmospheric pressure graphitization in Ar, followed by H2 …
SiC (0001), grown by atmospheric pressure graphitization in Ar, followed by H2 …
Water on graphene: review of recent progress
The sensitivity of graphene to the surrounding environment is given by its π electrons, which
are directly exposed to molecules in the ambient air. The high sensitivity of graphene to the …
are directly exposed to molecules in the ambient air. The high sensitivity of graphene to the …