Spintronic devices: a promising alternative to CMOS devices

P Barla, VK Joshi, S Bhat - Journal of Computational Electronics, 2021 - Springer
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

From MTJ device to hybrid CMOS/MTJ circuits: A review

VK Joshi, P Barla, S Bhat, BK Kaushik - IEEE Access, 2020 - ieeexplore.ieee.org
Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …

Magnetic domain wall neuron with lateral inhibition

N Hassan, X Hu, L Jiang-Wei, WH Brigner… - Journal of Applied …, 2018 - pubs.aip.org
The development of an efficient neuromorphic computing system requires the use of
nanodevices that intrinsically emulate the biological behavior of neurons and synapses …

A survey of spintronic architectures for processing-in-memory and neural networks

S Umesh, S Mittal - Journal of Systems Architecture, 2019 - Elsevier
The rising overheads of data-movement and limitations of general-purpose processing
architectures have led to a huge surge in the interest in “processing-in-memory”(PIM) …

Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device

B Paikaray, M Kuchibhotla, A Haldar… - Nanotechnology, 2023 - iopscience.iop.org
Magnetic skyrmions are topologically protected spin textures and they are suitable for future
logic-in-memory applications for energy-efficient, high-speed information processing and …

Voltage-based concatenatable full adder using spin hall effect switching

A Roohi, R Zand, D Fan… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Magnetic tunnel junction (MTJ)-based devices have been studied extensively as a
promising candidate to implement hybrid energy-efficient computing circuits due to their …

Advances in magnetic domain walls and their applications

S Dhull, A Nisar, N Bindal… - IEEE Nanotechnology …, 2022 - ieeexplore.ieee.org
This article explores the recent developments in spin-based domain wall (DW) memories.
The physics behind the DW motion, device materials, current challenges, and applications …

Majority-based spin-CMOS primitives for approximate computing

S Angizi, H Jiang, RF DeMara, J Han… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Promising for digital signal processing applications, approximate computing has been
extensively considered to tradeoff limited accuracy for improvements in other circuit metrics …

A novel low power and reduced transistor count magnetic arithmetic logic unit using hybrid STT-MTJ/CMOS circuit

P Barla, VK Joshi, S Bhat - IEEE Access, 2020 - ieeexplore.ieee.org
One of the major concern for CMOS technology is the increase in power dissipation as the
technology node lowers down to deep submicron region. Magnetic tunnel junction (MTJ) …

HielM: Highly flexible in-memory computing using STT MRAM

F Parveen, Z He, S Angizi, D Fan - 2018 23rd Asia and South …, 2018 - ieeexplore.ieee.org
In this paper we propose a Highly Flexible InMemory (HieIM) computing platform using STT
MRAM, which can be leveraged to implement Boolean logic functions without sacrificing …