This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

The ability to build structures with atomic precision is one of the defining features of
nanotechnology. Achieving true atomic-level functionality, however, requires the ability to …

Adiabatic shuttling of single impurity bound electrons to gate-induced surface states in
semiconductors has attracted much attention in recent times, mostly in the context of solid …

We present a complete theoretical treatment of Stark effects in bulk doped silicon, whose
predictions are supported by experimental measurements. A multivalley effective mass …

In this paper we examine the effects of varying several experimental parameters in the Kane
quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide …

Gate-induced wave function manipulation of a single dopant atom is a possible basis of
atomic scale electronics. From this perspective, we analyzed the effect of a small nearby …

The diamagnetic susceptibility and the binding energy of a hydrogenic donor in a quantum
well with different mass anisotropy parameters γ= m⊥/m|| are investigated in the presence …

We theoretically study the Hilbert space structure of two neighboring P-donor electrons in
silicon-based quantum computer architectures. To use electron spins as qubits, a crucial …

We calculate the electron exchange coupling for a phosphorus donor pair in silicon
perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In …

In this paper we investigate the implementation of single-qubit operations in the Kane solid-
state quantum computer by Rabi flip** the nuclear qubits via the application of resonant …