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Millimeter-wave and terahertz transceivers in SiGe BiCMOS technologies
D Kissinger, G Kahmen… - IEEE transactions on …, 2021 - ieeexplore.ieee.org
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …
W-band scalable 2× 2 phased-array transmitter and receiver chipsets in SiGe BiCMOS for high data-rate communication
H Li, J Chen, D Hou, Z Li, R Zhou… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a pair of W-band phased-array transmitter (TX) and receiver (RX)
chipsets in a 0.13-SiGe BiCMOS process for high data-rate wireless communication. Both …
chipsets in a 0.13-SiGe BiCMOS process for high data-rate wireless communication. Both …
A 205–273-GHz frequency multiplier chain (× 6) with 9-dBm output power and 1.92% DC-to-RF efficiency in 0.13-µm SiGe BiCMOS
Z Li, J Chen, D Tang, R Zhou… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a 205–273-GHz wideband frequency multiplier chain (FMC) in a 0.13-
SiGe BiCMOS technology with/500 GHz. The proposed FMC consists of a-band input …
SiGe BiCMOS technology with/500 GHz. The proposed FMC consists of a-band input …
220–360-GHz broadband frequency multiplier chains (x8) in 130-nm BiCMOS technology
This article presents two broadband frequency multiplier chains (FMCs) fabricated with a
standard 130-nm SiGe BiCMOS process. In both solutions, a broadband push-push …
standard 130-nm SiGe BiCMOS process. In both solutions, a broadband push-push …
A 120-GHz Class-F Frequency Doubler With 7.8-dBm POUT in 55-nm Bulk CMOS
This article analyzes the 2nd-order harmonic power generation with power level boosted by
fundamental and 3rd-order harmonic based on the Krummenacher–Vittoz (EKV) models …
fundamental and 3rd-order harmonic based on the Krummenacher–Vittoz (EKV) models …
A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS
J Yu, J Chen, P Zhou, H Li, Z Wang, Z Li… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a broadband sub-terahertz (THz) power amplifier (PA) with a low-loss
four-way power combiner. The proposed power combiner consists of an improved zero …
four-way power combiner. The proposed power combiner consists of an improved zero …
A 250-GHz differential SiGe amplifier with 21.5-dB gain for sub-THz transmitters
H Li, J Chen, D Hou, P Zhou, J Yu… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article presents a 250-GHz SiGe amplifier composed of three differential cascode
stages in a 0.13-μm SiGe BiCMOS technology (f T/f MAX= 300/500 GHz). The Marchand …
stages in a 0.13-μm SiGe BiCMOS technology (f T/f MAX= 300/500 GHz). The Marchand …
A 300-GHz transmitter front end with− 4.1-dBm peak output power for sub-THz communication using 130-nm SiGe BiCMOS technology
J Yu, J Chen, P Zhou, Z Li, H Li, P Yan… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
This article presents a compact 300-GHz transmitter front end manufactured in a 130-nm
SiGe BiCMOS process. The transmitter consists of a 240-GHz amplifier multiplier chain …
SiGe BiCMOS process. The transmitter consists of a 240-GHz amplifier multiplier chain …
Frequency doubler based on a single MoTe2/MoS2 anti-ambipolar heterostructure
The frequency doubler is a fundamental element in high frequency integrated circuits, which
is usually implemented by a large number of devices in conventional configurations. In this …
is usually implemented by a large number of devices in conventional configurations. In this …
60-GHz low-noise VGA and interpolation-based gain cell in a 40-nm CMOS technology
This paper presents the design and measurement of an interpolation-based low noise and
variable gain cell (IBA-cell) in the 60-GHz band, using a 40-nm CMOS technology. The …
variable gain cell (IBA-cell) in the 60-GHz band, using a 40-nm CMOS technology. The …