Sputtering Deposited and Energy Band Matched ZnSnN2 Buffer Layers for Highly Efficient Cd‐Free Cu2ZnSnS4 Solar Cells

F Ye, C He, T Wu, S Chen, Z Su… - Advanced Functional …, 2024 - Wiley Online Library
Abstract Kesterite Cu2ZnSnS4 (CZTS) solar cells with CdS buffer layers have the problem of
toxicity and cliff‐like energy band diagram disfavoring higher photoelectric conversion …

Combinatorial insights into do** control and transport properties of zinc tin nitride

AN Fioretti, A Zakutayev, H Moutinho… - Journal of Materials …, 2015 - pubs.rsc.org
ZnSnN2 is an Earth-abundant semiconductor analogous to the III–nitrides with potential as a
solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven …

Quasiparticle band structure of Zn-IV-N compounds

A Punya, WRL Lambrecht, M Van Schilfgaarde - Physical Review B …, 2011 - APS
Electronic energy-band structures of the Zn-IV-N 2 compounds, with IV equal to Si, Ge, and
Sn calculated in the quasiparticle self-consistent GW approximation and using the full …

Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

PC Quayle, EW Blanton, A Punya, GT Junno, K He… - physical review B, 2015 - APS
We investigate lattice ordering phenomena for the heterovalent ternaries that are based on
the wurtzite lattice, under the constraint that the octet rule be preserved. We show that, with …

Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study

A Laidouci, VN Singh, PK Dakua, DK Panda - Heliyon, 2023 - cell.com
The earth-abundant semiconductor zinc tin nitride (ZnSnN 2) has garnered significant
attention as a prospective material in photovoltaic and lighting applications, primarily due to …

Review of ZnSnN2 semiconductor material

IS Khan, KN Heinselman… - Journal of physics …, 2020 - iopscience.iop.org
Zinc tin nitride (ZnSnN 2) is one of the emerging ternary nitride semiconductors considered
for photovoltaic device applications due to its attractive and tunable material properties and …

Point Defects in a Two-Dimensional ZnSnN2 Nanosheet: A First-Principles Study on the Electronic and Magnetic Properties

A Bafekry, M Faraji, MM Fadlallah… - The Journal of …, 2021 - ACS Publications
The reduction of dimensionality is a very effective way to achieve appealing properties in
two-dimensional materials (2DMs). First-principles calculations can greatly facilitate the …

Band offsets between ZnGeN, GaN, ZnO, and ZnSnN and their potential impact for solar cells

A Punya, WRL Lambrecht - Physical Review B—Condensed Matter and …, 2013 - APS
The band offsets between the Zn-IV-N 2 nitrides, ZnGeN 2 and ZnSnN 2, and two other
closely lattice matched semiconductors, ZnO and GaN, are calculated using density …

Synthesis and Characterization of the Ternary Nitride Semiconductor Zn2VN3: Theoretical Prediction, Combinatorial Screening, and Epitaxial Stabilization

S Zhuk, AA Kistanov, SC Boehme, N Ott… - Chemistry of …, 2021 - ACS Publications
Computationally guided high-throughput synthesis is used to explore the Zn–V–N phase
space, resulting in the synthesis of a novel ternary nitride Zn2VN3. Following a …

Nanostructure and Optical Property Tailoring of Zinc Tin Nitride Thin Films through Phenomenological Decoupling: A Pathway to Enhanced Control

C Hain, K Wieczerzak, D Casari… - ACS Applied Nano …, 2024 - ACS Publications
This work addresses the need for precise control of thin film sputtering processes to enable
thin film material tailoring on the example of zinc tin nitride (ZTN) thin films deposited via …