Enhanced thermally aided memory performance using few-layer ReS2 transistors

N Goyal, D Mackenzie, V Panchal, H Jawa… - Applied Physics …, 2020 - pubs.aip.org
Thermally varying hysteretic gate operation in few-layer ReS 2 and MoS 2 back gate field
effect transistors (FETs) is studied and compared for memory applications. Clockwise …