There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for develo** a variety of smart, compact, sensors based on Si-photonics …

The formation and propagation of anti‐phase boundaries (APBs) in the epitaxial growth of III‐
V semiconductors on Silicon is still the subject of great debate, despite the impressive …

This work reports on the precise control of III‐V semiconductors' antiphase domain formation
and evolution during the epitaxial growth on an “on‐axis” Si (001) substrate with a very low …

Hybrid materials taking advantage of the different physical properties of materials are highly
attractive for numerous applications in today's science and technology. Here, it is …

The search for exotic new topological states of matter in widely accessible materials, for
which the manufacturing process is mastered, is one of the major challenges of the current …

Integration of III-V devices with Si-photonics and fabrication of monolithic III-V/Si tandem
solar cells require the heteroepitaxy of III-V compounds on Si. We report on the lattice tilt …

The development of high-efficiency photoelectrodes at low manufacturing cost is of great
interest for the production of renewable and green hydrogen through solar-driven water …

Here, we compare the stabilities of different III-V crystals configurations on stepped Si
substrates, with or without anti-phase boundaries, for abrupt and compensated interfaces …

We investigated the chemical beam epitaxy of GaP 1− x N x grown on nominally (001)-
oriented Si substrates, as desired for the lattice-matched integration of optoelectronic …

As byproducts of the direct growth of III–V materials on the on-axis Si (001) substrates via
molecular beam epitaxy (MBE), antiphase boundaries (APBs) degrade the performance of …