We have developed an actinic full-field EUV mask blank inspection tool that consists of an
EUV light source, a 26X Schwarzschild optics for dark-field imaging, an EUV-sensitive …

We report the demonstration of a reflection microscope that operates at 13.2 nm wavelength
with a spatial resolution of 55+/-3 nm. The microscope uses illumination from a tabletop …

We describe the characterization of native phase defects in the manufacturing of extreme
ultraviolet (EUV) mask blanks using the state-of-the-art mask metrology equipment in …

Motivated by the need for at-wavelength observation of extreme ultraviolet (EUV) lithography
masks, we developed a full-field EUV microscope that has a multilayer-mirror objective. This …

Miniaturization is a driving force both for the performance and for cost reductions of
semiconductor devices. It is therefore carried on at an enormous pace. Gordon Moore …

Multilayer defects embedded in EUV mask blanks are of primary concern in making usable
mask because the multilayer defects as small as 1.5 nm in height cause phase shifts and are …

We have realized the first demonstration of a table-top aerial imaging microscope capable of
characterizing pattern and defect printability in extreme ultraviolet lithography masks. The …

Improvements in the detection capability of a high-volume-manufacturing (HVM) actinic
blank inspection (ABI) prototype for native defects caused by illumination numerical aperture …

We present the potential optical performance capabilities of a next-generation extreme
ultraviolet (EUV) mask-imaging microscope, based on the proven optical principle of the …

The demonstration of table-top high average power extreme-ultraviolet (EUV) lasers
combined with the engineering of specialized optics has enabled the demonstration of full …