Two-step photon up-conversion solar cells

S Asahi, H Teranishi, K Kusaki, T Kaizu… - Nature communications, 2017 - nature.com
Reducing the transmission loss for below-gap photons is a straightforward way to break the
limit of the energy-conversion efficiency of solar cells (SCs). The up-conversion of below …

Photovoltaics at the mesoscale: insights from quantum-kinetic simulation

U Aeberhard - Journal of Physics D: Applied Physics, 2018 - iopscience.iop.org
Abstract This Topical Review discusses insights into the physical mechanisms of
nanostructure solar cell operation as provided by numerical device simulation using a state …

VENUS: A vertical-cavity surface-emitting laser electro-opto-thermal numerical simulator

A Tibaldi, F Bertazzi, M Goano… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
The properties of vertical-cavity surface-emitting lasers (VCSELs) are investigated by means
of a multiphysical Vcsel Electro-opto-thermal NUmerical Simulator (VENUS). VENUS …

Impact of carrier transport on the performance of QD lasers on silicon: a drift-diffusion approach

M Saldutti, A Tibaldi, F Cappelluti, M Gioannini - Photonics Research, 2020 - opg.optica.org
The operation of quantum dot lasers epitaxially grown on silicon is investigated through a
quantum-corrected Poisson-drift-diffusion model. This in-house developed simulation …

[HTML][HTML] Impact of do** on InAs/GaAs quantum-dot solar cells: A numerical study on photovoltaic and photoluminescence behavior

F Cappelluti, M Gioannini, A Khalili - Solar Energy Materials and Solar …, 2016 - Elsevier
We investigate the effect of do** on quantum dot (QD) solar cells by analysing their
behavior in terms of photovoltaic characteristic, external quantum efficiency, and …

Light-trap** enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off

F Cappelluti, D Kim, M van Eerden, AP Cédola… - Solar Energy Materials …, 2018 - Elsevier
We report thin-film InAs/GaAs quantum dot (QD) solar cells with n− i− p+ deep junction
structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-in wafers …

Charge transport in quantum dot sensitized solar cells: A mathematical model

VK Singhal, UK Verma, M Joshi, B Kumar - Solar Energy, 2022 - Elsevier
In this paper, charge transport in quantum dot (QD) thin films is modeled by considering trap-
state assisted tunneling among the QD thin films. Multiple parameters associated with traps …

Role of charge separation on two-step two photon absorption in InAs/GaAs quantum dot intermediate band solar cells

A Creti, V Tasco, A Cola, G Montagna… - Applied Physics …, 2016 - pubs.aip.org
In this work, we report on the competition between two-step two photon absorption, carrier
recombination, and escape in the photocurrent generation mechanisms of high quality …

Hybrid quantum-classical modeling of quantum dot devices

M Kantner, M Mittnenzweig, T Koprucki - Physical Review B, 2017 - APS
The design of electrically driven quantum dot devices for quantum optical applications asks
for modeling approaches combining classical device physics with quantum mechanics. We …

Droplet epitaxy quantum dot based infrared photodetectors

S Vichi, S Bietti, A Khalili, M Costanzo… - …, 2020 - iopscience.iop.org
The fabrication and characterization of an infrared photodetector based on GaAs droplet
epitaxy quantum dots embedded in Al 0.3 Ga 0.7 As barrier is reported. The high control …