In this paper, we show how plasma-wave instability in an asymmetrically biased ungated
InGaAs high-electron mobility transistor (HEMT) leads to terahertz emissions. Numerical …

The plasma wave instability in rectangle field effect transistors (FETs) is studied with electron
diffusion current density by quantum hydrodynamic model in this paper. General dispersion …

Chaotic electron transport in semiconductor superlattice induced by terahertz electric field
that is superimposed on a dc electric field along the superlattice axis are studied using the …

Linear current-voltage pattern, has been and continues to be the basis for characterizing,
evaluating performance, and designing integrated circuits, but is shown not to hold its …

Using a hydrodynamic model self-consistently coupled to a Poisson solver, we investigate
the time and frequency response of InGaAs diodes excited at room temperature by an …

We numerically analyze the system based on the essentially non-oscillatory shock capturing
scheme in order to characterize the Dyakonov-Shur (DS) instability in a gated two …

By numerical simulations we investigate the dispersion of the plasma frequency in a gated
channel of n-type InGaAs layer of thickness W and submicron length L at T= 300 K⁠. In the …

The problems related with the intrinsic noise in FET/HEMT channels induced by continuous
branching of the total current between channel and gate are considered in the framework of …

By means of numerical simulations we investigate the plasma frequency associated with
voltage fluctuations in an n-type In 0.53 Ga 0.47 As layer of thickness W and submicron …

Using a self-consistent Monte Carlo simulator we investigate the spectrum of voltage
fluctuations of an n-type InGaAs two-terminal layer of variable thickness W in the range 1 …