Soon after it was discovered that intense laser pulses of nanosecond duration from a ruby
laser could anneal the lattice of silicon, it was established that this so-called pulsed laser …

Phase‐change materials can rapidly and reversibly be switched between an amorphous
and a crystalline phase. Since both phases are characterized by very different optical and …

Laser materials processing has made tremendous progress and is now at the forefront of
industrial and medical applications. The book describes recent advances in smart and …

The use of metals of nanometer dimensions to enhance and manipulate light-matter
interactions for emerging plasmonics-enabled nanophotonic and optoelectronic applications …

Crystallization processes were studied for germanium–antimony–tellurium (Ge–Sb–Te)
ternary amorphous thin film as a single layer or sandwiched between various dielectric films …

Time resolved imaging has been used to analyze structural transformations induced by
intense 100 fs laser pulses in amorphous GeSb films. Above a threshold of 19 mJ/cm 2 the …

Chalcogenide phase-change materials (PCMs), in particular, the flagship Ge 2 Sb 2 Te 5
(GST), are leading candidates for advanced memory applications. Yet, GST in conventional …

Femtosecond laser hyperdoped silicon, also known as the black silicon (BS), has a large
number of defects and damages, which results in unstable and undesirable optical and …

The energy density crystallization threshold of amorphous GeSb films has been studied for
the first time as a function of the laser pulse duration in the range from 170 fs to 8 ns. The …

Time-resolved measurements of the spectral dielectric function reveal new information about
ultrafast phase transitions induced by femtosecond laser pulses in Sb-rich amorphous GeSb …