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Energy dissipation and transport in nanoscale devices
E Pop - Nano Research, 2010 - Springer
Understanding energy dissipation and transport in nanoscale structures is of great
importance for the design of energy-efficient circuits and energy-conversion systems. This is …
importance for the design of energy-efficient circuits and energy-conversion systems. This is …
Near-threshold computing: Reclaiming moore's law through energy efficient integrated circuits
Power has become the primary design constraint for chip designers today. While Moore's
law continues to provide additional transistors, power budgets have begun to prohibit those …
law continues to provide additional transistors, power budgets have begun to prohibit those …
Resonator-based M/NEMS logic devices: Review of recent advances
As transistors are reaching their fundamental limits in terms of power consumption,
miniaturization, and heat generation, there is an imminent need to develop alternate …
miniaturization, and heat generation, there is an imminent need to develop alternate …
Interconnects in the third dimension: Design challenges for 3D ICs
K Bernstein, P Andry, J Cann, P Emma… - Proceedings of the 44th …, 2007 - dl.acm.org
Despite generation upon generation of scaling, computer chips have until now remained
essentially 2-dimensional. Improvements in on-chip wire delay and in the maximum number …
essentially 2-dimensional. Improvements in on-chip wire delay and in the maximum number …
[KNIHA][B] Leakage in nanometer CMOS technologies
SG Narendra, AP Chandrakasan - 2006 - books.google.com
Scaling transistors into the nanometer regime has resulted in a dramatic increase in MOS
leakage (ie, off-state) current. Threshold voltages of transistors have scaled to maintain …
leakage (ie, off-state) current. Threshold voltages of transistors have scaled to maintain …
Practical strategies for power-efficient computing technologies
After decades of continuous scaling, further advancement of silicon microelectronics across
the entire spectrum of computing applications is today limited by power dissipation. While …
the entire spectrum of computing applications is today limited by power dissipation. While …
Study of random dopant fluctuation effects in germanium-source tunnel FETs
The effects of random dopant fluctuations (RDFs) on the performance of Germanium-source
tunnel field-effect transistors (TFETs) is studied using 3-D device simulation. The RDF in the …
tunnel field-effect transistors (TFETs) is studied using 3-D device simulation. The RDF in the …
Energy-efficient subthreshold processor design
Subthreshold circuits have drawn a strong interest in recent ultralow power research. In this
paper, we present a highly efficient subthreshold microprocessor targeting sensor …
paper, we present a highly efficient subthreshold microprocessor targeting sensor …
Within-die variation-aware dynamic-voltage-frequency-scaling with optimal core allocation and thread hop** for the 80-core teraflops processor
S Dighe, SR Vangal, P Aseron, S Kumar… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
In this paper, we present measured within-die core-to-core Fmax and leakage variation data
for an 80-core processor in 65 nm CMOS and 1) populate a parameterized …
for an 80-core processor in 65 nm CMOS and 1) populate a parameterized …
Exploring variability and performance in a sub-200-mV processor
In this study, we explore the design of a subthreshold processor for use in ultra-low-energy
sensor systems. We describe an 8-bit subthreshold processor that has been designed with …
sensor systems. We describe an 8-bit subthreshold processor that has been designed with …