Energy dissipation and transport in nanoscale devices

E Pop - Nano Research, 2010 - Springer
Understanding energy dissipation and transport in nanoscale structures is of great
importance for the design of energy-efficient circuits and energy-conversion systems. This is …

Near-threshold computing: Reclaiming moore's law through energy efficient integrated circuits

RG Dreslinski, M Wieckowski, D Blaauw… - Proceedings of the …, 2010 - ieeexplore.ieee.org
Power has become the primary design constraint for chip designers today. While Moore's
law continues to provide additional transistors, power budgets have begun to prohibit those …

Resonator-based M/NEMS logic devices: Review of recent advances

S Ilyas, MI Younis - Sensors and Actuators A: Physical, 2020 - Elsevier
As transistors are reaching their fundamental limits in terms of power consumption,
miniaturization, and heat generation, there is an imminent need to develop alternate …

Interconnects in the third dimension: Design challenges for 3D ICs

K Bernstein, P Andry, J Cann, P Emma… - Proceedings of the 44th …, 2007 - dl.acm.org
Despite generation upon generation of scaling, computer chips have until now remained
essentially 2-dimensional. Improvements in on-chip wire delay and in the maximum number …

[KNIHA][B] Leakage in nanometer CMOS technologies

SG Narendra, AP Chandrakasan - 2006 - books.google.com
Scaling transistors into the nanometer regime has resulted in a dramatic increase in MOS
leakage (ie, off-state) current. Threshold voltages of transistors have scaled to maintain …

Practical strategies for power-efficient computing technologies

L Chang, DJ Frank, RK Montoye… - Proceedings of the …, 2010 - ieeexplore.ieee.org
After decades of continuous scaling, further advancement of silicon microelectronics across
the entire spectrum of computing applications is today limited by power dissipation. While …

Study of random dopant fluctuation effects in germanium-source tunnel FETs

N Damrongplasit, C Shin, SH Kim… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
The effects of random dopant fluctuations (RDFs) on the performance of Germanium-source
tunnel field-effect transistors (TFETs) is studied using 3-D device simulation. The RDF in the …

Energy-efficient subthreshold processor design

B Zhai, S Pant, L Nazhandali, S Hanson… - … Transactions on Very …, 2009 - ieeexplore.ieee.org
Subthreshold circuits have drawn a strong interest in recent ultralow power research. In this
paper, we present a highly efficient subthreshold microprocessor targeting sensor …

Within-die variation-aware dynamic-voltage-frequency-scaling with optimal core allocation and thread hop** for the 80-core teraflops processor

S Dighe, SR Vangal, P Aseron, S Kumar… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
In this paper, we present measured within-die core-to-core Fmax and leakage variation data
for an 80-core processor in 65 nm CMOS and 1) populate a parameterized …

Exploring variability and performance in a sub-200-mV processor

S Hanson, B Zhai, M Seok, B Cline… - IEEE Journal of Solid …, 2008 - ieeexplore.ieee.org
In this study, we explore the design of a subthreshold processor for use in ultra-low-energy
sensor systems. We describe an 8-bit subthreshold processor that has been designed with …