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[HTML][HTML] Hybrid and heterogeneous photonic integration
Increasing demand for every faster information throughput is driving the emergence of
integrated photonic technology. The traditional silicon platform used for integrated …
integrated photonic technology. The traditional silicon platform used for integrated …
Hybrid integration of silicon photonics circuits and InP lasers by photonic wire bonding
Efficient coupling of III–V light sources to silicon photonic circuits is one of the key
challenges of integrated optics. Important requirements are low coupling losses, as well as a …
challenges of integrated optics. Important requirements are low coupling losses, as well as a …
[HTML][HTML] A review of the reliability of integrated IR laser diodes for silicon photonics
With this review paper we provide an overview of the main degradation mechanisms that
limit the long-term reliability of IR semiconductor lasers for silicon photonics applications …
limit the long-term reliability of IR semiconductor lasers for silicon photonics applications …
Microwave photonics applications of stimulated Brillouin scattering
Generation, processing, and sensing of microwave signals using photonic technologies offer
immunity from electromagnetic interference, allow high-speed operation over a wide …
immunity from electromagnetic interference, allow high-speed operation over a wide …
Origin of the diffusion-related optical degradation of 1.3 μm InAs QD-LDs epitaxially grown on silicon substrate
This paper investigates the origin of the diffusion process responsible for the optical
degradation of InAs quantum dot (QD) laser diodes epitaxially grown on silicon. By means of …
degradation of InAs quantum dot (QD) laser diodes epitaxially grown on silicon. By means of …
Degradation of 1.3 μm InAs quantum-dot laser diodes: Impact of dislocation density and number of quantum dot layers
This paper investigates the impact of dislocation density and active layer structure on the
degradation mechanisms of 1.3 μm InAs Quantum Dot (QD) lasers for silicon photonics. We …
degradation mechanisms of 1.3 μm InAs Quantum Dot (QD) lasers for silicon photonics. We …
1300 nm Semiconductor optical amplifier compatible with an InP monolithic active/passive integration technology
In monolithic photonic integrated circuits (PICs), an optimized active/passive integration is
needed to provide efficient coupling and low amount of interface reflections between …
needed to provide efficient coupling and low amount of interface reflections between …
C-band directly modulated lasers with tunable photon-photon resonance in InP membrane
InP membrane directly modulated semiconductor lasers (DMLs) with photon-photon
resonance (PPR) have a lot of potential to be used in short-range telecommunication …
resonance (PPR) have a lot of potential to be used in short-range telecommunication …
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits
This paper reports on the degradation processes of heterogeneous III-V/Silicon loop-mirrors
laser-diodes designed as the optical sources for next-generation Photonic Integrated …
laser-diodes designed as the optical sources for next-generation Photonic Integrated …
Degradation of 1.3 μm Quantum Dot Laser Diodes for silicon photonics: dependence on the number of dot-in-a-well layers
For the first time, we analyze the optical degradation of 1.3 μm InAs quantum dot laser
diodes (QD LDs) epitaxially grown on silicon as a function of the number of dot-in-a-well …
diodes (QD LDs) epitaxially grown on silicon as a function of the number of dot-in-a-well …