[HTML][HTML] Hybrid and heterogeneous photonic integration

P Kaur, A Boes, G Ren, TG Nguyen, G Roelkens… - APL photonics, 2021 - pubs.aip.org
Increasing demand for every faster information throughput is driving the emergence of
integrated photonic technology. The traditional silicon platform used for integrated …

Hybrid integration of silicon photonics circuits and InP lasers by photonic wire bonding

MR Billah, M Blaicher, T Hoose, PI Dietrich… - Optica, 2018 - opg.optica.org
Efficient coupling of III–V light sources to silicon photonic circuits is one of the key
challenges of integrated optics. Important requirements are low coupling losses, as well as a …

[HTML][HTML] A review of the reliability of integrated IR laser diodes for silicon photonics

M Buffolo, C De Santi, J Norman, C Shang, JE Bowers… - Electronics, 2021 - mdpi.com
With this review paper we provide an overview of the main degradation mechanisms that
limit the long-term reliability of IR semiconductor lasers for silicon photonics applications …

Microwave photonics applications of stimulated Brillouin scattering

MK Varun, A Mishra, R Pant - Journal of Optics, 2022 - iopscience.iop.org
Generation, processing, and sensing of microwave signals using photonic technologies offer
immunity from electromagnetic interference, allow high-speed operation over a wide …

Origin of the diffusion-related optical degradation of 1.3 μm InAs QD-LDs epitaxially grown on silicon substrate

M Buffolo, F Lain, M Zenari, C De Santi… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
This paper investigates the origin of the diffusion process responsible for the optical
degradation of InAs quantum dot (QD) laser diodes epitaxially grown on silicon. By means of …

Degradation of 1.3 μm InAs quantum-dot laser diodes: Impact of dislocation density and number of quantum dot layers

M Buffolo, L Rovere, C De Santi, D Jung… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
This paper investigates the impact of dislocation density and active layer structure on the
degradation mechanisms of 1.3 μm InAs Quantum Dot (QD) lasers for silicon photonics. We …

1300 nm Semiconductor optical amplifier compatible with an InP monolithic active/passive integration technology

J Hazan, S Andreou, D Pustakhod… - IEEE Photonics …, 2022 - ieeexplore.ieee.org
In monolithic photonic integrated circuits (PICs), an optimized active/passive integration is
needed to provide efficient coupling and low amount of interface reflections between …

C-band directly modulated lasers with tunable photon-photon resonance in InP membrane

A Zozulia, R Schatz, S Rihani, G Berry… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
InP membrane directly modulated semiconductor lasers (DMLs) with photon-photon
resonance (PPR) have a lot of potential to be used in short-range telecommunication …

Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits

M Buffolo, M Pietrobon, C De Santi, F Samparisi… - Microelectronics …, 2018 - Elsevier
This paper reports on the degradation processes of heterogeneous III-V/Silicon loop-mirrors
laser-diodes designed as the optical sources for next-generation Photonic Integrated …

Degradation of 1.3 μm Quantum Dot Laser Diodes for silicon photonics: dependence on the number of dot-in-a-well layers

M Zenari, M Gioannini, M Buffolo… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
For the first time, we analyze the optical degradation of 1.3 μm InAs quantum dot laser
diodes (QD LDs) epitaxially grown on silicon as a function of the number of dot-in-a-well …