Current carrier mobility fluctuations in homogeneous semiconductors
SV Melkonyan, FV Gasparyan… - … and Information in …, 2003 - spiedigitallibrary.org
The two main causes of origin of the mobility fluctuation of the electrons in homogeneous,
unlimited, and non-degenerated semiconductors are discussed. It is shown that the mobility …
unlimited, and non-degenerated semiconductors are discussed. It is shown that the mobility …
Bulk mechanism of mobility fluctuation depending on features of the semiconductor-environment interface
SV Melkonyan - … in Nanoelectronics, Sensors, and Standards II, 2004 - spiedigitallibrary.org
The influence of surface scatterings on dam** of the equilibrium fluctuations of the
electron distribution function, originating in the bulk of homogeneous, bounded …
electron distribution function, originating in the bulk of homogeneous, bounded …
Fluctuation-enchanced chemical sensing
Both selectivity and sensitivity of chemical sensors can be significantly improved by
exploiting the information contained in microfluctuations present in the sensor system. We …
exploiting the information contained in microfluctuations present in the sensor system. We …
Current 1/f fluctuations in equilibrium semiconductor
SV Melkonyan - Noise and Information in Nanoelectronics …, 2003 - spiedigitallibrary.org
The current internal fluctuations appearing in the homogeneous, unlimited and non-
degenerate semiconductors having parabolic band structure are investigated. At the …
degenerate semiconductors having parabolic band structure are investigated. At the …