This article provides a review of methods of predicting mass-induced resonance shifts in
microcantilevers. It combines a review of factors that influence resonance frequency shifts …

Knowledge of accurate values of elastic modulus of (Al 1-x Sc x) N is required for design of
piezoelectric resonators and related devices. Thin films of (Al 1-x Sc x) N across the entire …

Accurate Young's modulus models of β-type Ti alloys can provide a convenient approach to
develo** Ti alloy, especially non-toxic and biocompatible medical materials. Data-driven …

This paper presents a method to determine the mechanical properties of piezoelectric thin
films. The vibrational behavior of microcantilevers and clamped–clamped beams actuated …

We show that bending of flexible light-emitting diodes based on polar group III–V nitride
structures can function as more than mechanically flexible devices through numerical …

In recent years, the remarkable properties and potential applications of III-nitride (III-N)
semiconductors have sparked a significant interest in the field of microelectromechanical …

The existence of barrier inhomogeneities at metal–semiconductor interfaces is believed to
be one of the reasons for the non-ideal behaviour of Schottky contacts. In general, barrier …

Group III-nitride semiconductors with tubular structures offer significant potential across
various applications, including optics, electronics, and chemical sensors. However …

We use a non-classical modified couple stress theory including the acceleration gradients
(MCST-AG), to precisely demonstrate the size dependency of the mechanical properties of …

Photo-electrochemical (PEC) etching is a promising technique for fabricating GaN
microelectromechanical systems devices. In this study, we demonstrate the fabrication of …