Introducing boron gallium nitride as carriers' source layer for efficient near-ultraviolet microLED

J Bashir, M Usman, N Sengouga, M Hassani - Physica Scripta, 2024 - iopscience.iop.org
This study explored the impact of boron gallium nitride (BGaN) in buffer layer and hole
source layer. We employed B 0.05 Ga 0.95 N which reduced the lattice mismatch as well as …

Semi-classical physics based model in AlGaN/BGaN based ultraviolet LED with p-AlGaN layer sandwiched around electron-blocking layer for droop-free efficiency

G Saranya, NM Sivamangai, J Ajayan, S Sreejith… - Micro and …, 2024 - Elsevier
This work reports the droop-free efficiency of an Ultraviolet Light Emitting Diode (UV LED) of
a Multiple Quantum Well (MQW) with an Electron Blocking Layer (EBL) sandwiched with a p …

A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes

G Dhivyasri, M Manikandan, J Ajayan… - Optical and Quantum …, 2024 - Springer
The ByAlxGa1-x–yN system validates promise as a suitable option for fabricating opto-
electronic devices like light-emitting-diodes (LEDs) and laser diodes. This study conducts a …

[PDF][PDF] Optimizing performance and energy consumption in GaN (n)/In x Ga 1-x N/GaN/AlGaN/GaN (p) light emitting diodes by quantum-well number and mole fraction

N SELMANE, A CHEKNANE, F KHEMLOUL, H Hilal… - 2023 - assets-eu.researchsquare.com
Light-emitting devices (LEDs) with higher performance, lower energy demand and minimal
environmental impact are needed. With wide-band gaps and high emission efficiencies, III-V …

Impact of boron in ultraviolet quantum well-based light emitting diodes

G Dhivyasri, M Manikandan, J Ajayan, S Sreejith… - 2023 - researchsquare.com
The B y Al x Ga 1-x–y N system validates promise as a suitable option for fabricating opto-
electronic devices like Light-Emitting-Diodes (LEDs) & laser diodes. This study conducts a …

Light Extraction Efficiency Improvement Techniques in Light-Emitting Diodes

M Manikandan, G Dhivyasri, D Nirmal… - … and Inorganic Light …, 2023 - taylorfrancis.com
This chapter presents an overview of the rapid progress being made in light-emitting diode
(LED) devices for enhancing their optical and electrical properties. Over the past few …

Simulation and Comparison of AlGaN LEDs with Boron Doped GaN Well Using Assorted Aluminium Concentration

G Dhivyasri, D Nirmal, M Manikandan… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
The influence of aluminium concentration on the optical devices of Gallium Nitride Light
Emitting Diodes is examined to improve the optical performance of the Light Emitting …

[PDF][PDF] Optimizing performance and energy consumption in GaN (n)/InxGa1-xN/GaN/AlGaN/GaN (p) light-emitting diodes by quantum-well number and mole fraction

P Ramallah - chalcogen.ro
Light emitting devices (LEDs) are emerging as alternative for traditional lighting systems.
The main feature for LEDs in their high energy-to-light conversion efficiency. Energy saving …