Strain engineering has been extensively studied as a practical approach for controlling the
electronic and optoelectronic properties of inorganic materials by deliberately imposing …

The stress states in unintentionally doped GaN epilayers grown on Si (111), 6H-SiC (0001),
and c-plane sapphire, and their effects on optical properties of GaN films were investigated …

Bond relaxation from one equilibrium to another under perturbation matters uniquely the
performance of a substance and thus it has enormous impact to materials science and …

Different techniques for epitaxial growth of gallium nitride and main properties of GaN layers
as well as devices made on the base of GaN-structures are described in the review. A new …

Raman spectroscopy was used to characterize the residual stress and defect density of AlN
thin films reactively sputtered on silicon (100). The authors studied the correlation between …

Aluminum nitride nanobelts with hexagonal structure were successfully synthesized by
evaporating aluminum powder in ammonia/nitrogen atmosphere at 1200° C. The as …

High-crystalline-quality epitaxial films of wurtzite AlN were grown by metalorganic vapor
phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE). The lattice strain of the …

The effect of impurities and defects on the optical properties of AlN was investigated. High-
quality AlN single crystals of more than 20 mm 2 size were examined. Different crucible …

AlN is the key material to obtain high performance ultraviolet optoelectronic and
microelectronic devices. To obtain high quality AlN, a high temperature annealing method is …

Hexagonal AlN (h-AlN) nanowires with an average diameter of around 15 nm have been
prepared by an extended vapor–liquid–solid growth technique and characterized by X-ray …