[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials

W Zhang, E Ma - Materials Today, 2020 - Elsevier
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …

Device-scale atomistic modelling of phase-change memory materials

Y Zhou, W Zhang, E Ma, VL Deringer - Nature Electronics, 2023 - nature.com
Computer simulations can play a central role in the understanding of phase-change
materials and the development of advanced memory technologies. However, direct quantum …

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

A Bafekry, B Mortazavi, M Faraji, M Shahrokhi… - Scientific Reports, 2021 - nature.com
Abstract Sb 2 S 3 and Sb 2 Se 3 are well-known layered bulk structures with weak van der
Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic …

Change in structure of amorphous Sb–Te phase‐change materials as a function of stoichiometry

S Ahmed, X Wang, H Li, Y Zhou, Y Chen… - physica status solidi …, 2021 - Wiley Online Library
Chalcogenide phase‐change materials (PCMs) are a leading candidate for non‐volatile
memory and neuro‐inspired computing applications. Antimony telluride alloys can be made …

Bonding nature and optical contrast of TiTe2/Sb2Te3 phase-change heterostructure

X Wang, Y Wu, Y Zhou, VL Deringer… - Materials Science in …, 2021 - Elsevier
Chalcogenide phase-change materials (PCMs) are regarded as the leading candidate for
storage-class non-volatile memory and neuro-inspired computing. Recently, using the TiTe …

Tailoring the structural and optical properties of germanium telluride phase-change materials by indium incorporation

X Wang, X Shen, S Sun, W Zhang - Nanomaterials, 2021 - mdpi.com
Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM)
enter the global memory market as storage-class memory (SCM), holding great promise for …

[HTML][HTML] Density dependent local structures in InTe phase-change materials

S Sun, B Zhang, X Wang, W Zhang - APL Materials, 2021 - pubs.aip.org
Chalcogenide phase-change materials based random access memory (PCRAM) is one of
the leading candidates for the development of non-volatile memory and neuro-inspired …