The last few years have seen a great deal of progress in the development of transmission
electron microscopy based techniques for strain map**. New techniques have appeared …

We suggest a method for chemical map** that is based on scanning transmission electron
microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The …

The nitrogen concentration of GaN0. 01≤ x≤ 0.05 As1− x quantum wells was determined
from high resolution scanning transmission electron microscopy (HRSTEM) images taken …

This article deals with the measurement of strain in semiconductor heterostructures from
convergent beam electron diffraction patterns. In particular, three different algorithms in the …

Measurement of lattice strain is important to characterize semiconductor nanostructures. As
strain has large influence on the electronic band structure, methods for the measurement of …

A high-speed direct electron detection system is introduced to the field of transmission
electron microscopy and applied to strain measurements in semiconductor nanostructures …

The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to
maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a …

Abstract Ternary In x Ga 1− x N alloys became technologically attractive when p-do** was
achieved to produce blue and green light emitting diodes (LED) s. Starting in the mid …

InGaN is the basis of a new generation of light‐emitting devices, with enormous
technological potential; it is currently one of the most intensively studied semiconductor …

Surface energy is a fundamental property of materials and is particularly important in
describing nanomaterials where atoms or molecules at the surface constitute a large fraction …