Single photon avalanche diode for CMOS circuits
A single photon avalanche diode for use in a CMOS inte grated circuit includes a deep n-
well region formed above a p-type Substrate and an n-well region formed above and in …
well region formed above a p-type Substrate and an n-well region formed above and in …
A reconfigurable single-photon-counting integrating receiver for optical communications
A reconfigurable Single-Photon Avalanche Diode integrating receiver in standard 130 nm
CMOS is presented for optical links with an array readout bandwidth of 100 MHz. A …
CMOS is presented for optical links with an array readout bandwidth of 100 MHz. A …
A low dark count pin diode based SPAD in CMOS technology
In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the
device is designed using a vertical pin diode construction. The pin diode with a wide …
device is designed using a vertical pin diode construction. The pin diode with a wide …
Fast switching response of Na-doped CZTS photodetector from visible to NIR range
It is important to study the photoconductivity to understand the optoelectronic properties of
semiconductor thin films. Here, we report the effect of Na do** on the photoconductivity …
semiconductor thin films. Here, we report the effect of Na do** on the photoconductivity …
Enhancing the contact between a-IGZO and metal by hydrogen plasma treatment for a high-speed varactor (> 30 GHz)
H Park, J Yun, S Park, I Ahn, G Shin… - ACS Applied …, 2022 - ACS Publications
We achieved the lowest contact resistance between a-IGZO and a metal electrode for> 30
GHz operation of an oxide semiconductor device. For high-resolution display and high …
GHz operation of an oxide semiconductor device. For high-resolution display and high …
Enhanced photoresponse of Cu2ZnSn (S, Se) 4 based photodetector in visible range
Fast switching response of photodetectors is needed for many applications. Therefore, it is
necessary to study the photoconductivity properties of earth abundant and cost effective …
necessary to study the photoconductivity properties of earth abundant and cost effective …
Over 10 GHz lateral silicon photodetector fabricated on silicon-on-insulator substrate by CMOS-compatible process
G Li, K Maekita, H Mitsuno, T Maruyama… - Japanese Journal of …, 2015 - iopscience.iop.org
We report a design and implementation of lateral silicon photodetectors fabricated on a
silicon-on-insulator (SOI) substrate in a complementary CMOS-compatible process. In …
silicon-on-insulator (SOI) substrate in a complementary CMOS-compatible process. In …
Design and evaluation of filterless RGB sensor on standard CMOS process
T Sugiura, H Miura, N Nakano - IEEE Photonics Journal, 2022 - ieeexplore.ieee.org
In this study, a color detection phenomenon that does not utilize color filters is evaluated via
the standard CMOS process. The device comprises multiple pn-junctions stacked in the …
the standard CMOS process. The device comprises multiple pn-junctions stacked in the …
Avalanche double photodiode in 40-nm standard CMOS technology
This paper investigates a silicon (Si) avalanche double photodiode (ADPD) fabricated in 40-
nm standard CMOS technology. Two different types of double photodiodes (DPDs) will be …
nm standard CMOS technology. Two different types of double photodiodes (DPDs) will be …
Self-powered implantable CMOS photovoltaic cell with 18.6% efficiency
Harvesters for implantable medical applications need to generate enough energy to power
their loads, but their efficiency is reduced when implanted under the tissue. Conventional …
their loads, but their efficiency is reduced when implanted under the tissue. Conventional …