Development of semiconducting ScN
Since the 1960s advances in electronic and optoelectronic device technologies have been
primarily orchestrated by III-V semiconductors, which have led to an age of consumer …
primarily orchestrated by III-V semiconductors, which have led to an age of consumer …
Non-equilibrium dynamics, materials and structures for hot carrier solar cells: a detailed review
Since their advent around the start of the millennium, hot carrier solar cells came into the
focus of a broader research community as one of the so-called third generation photovoltaic …
focus of a broader research community as one of the so-called third generation photovoltaic …
[HTML][HTML] Optical constants and band gap of wurtzite Al1− xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x= 0.41
Wurtzite Al 1− x Sc x N thin films with scandium Sc concentrations up to x= 0.41 were
prepared by reactive pulsed DC magnetron co-sputtering at heater temperatures between …
prepared by reactive pulsed DC magnetron co-sputtering at heater temperatures between …
ScGaN and ScAlN: emerging nitride materials
This review addresses the recent development and future prospects for Sc-based III-nitride
alloys in energy-efficient device applications. Wurtzite-structure ScAlN and ScGaN alloys are …
alloys in energy-efficient device applications. Wurtzite-structure ScAlN and ScGaN alloys are …
Optical and transport measurement and first-principles determination of the ScN band gap
The electronic structure of scandium nitride is determined by combining results from optical
and electronic transport measurements with first-principles calculations. Hybrid functional …
and electronic transport measurements with first-principles calculations. Hybrid functional …
Bandgap in Al1− xScxN
Aluminum scandium nitride (Al 1− x Sc x N) layers deposited by reactive magnetron co-
sputtering on sapphire 0001 substrates at 850 C are epitaxial single-crystals for x≤ 0.20 …
sputtering on sapphire 0001 substrates at 850 C are epitaxial single-crystals for x≤ 0.20 …
Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO (001) substrates
Epitaxial ScN (001) thin films were grown on MgO (001) substrates by dc reactive magnetron
sputtering. The deposition was performed in an Ar/N 2 atmosphere at 2× 10− 3 Torr at a …
sputtering. The deposition was performed in an Ar/N 2 atmosphere at 2× 10− 3 Torr at a …
Dominant scattering mechanisms in limiting the electron mobility of scandium nitride
Electron mobility in nitride semiconductors is limited by electron–phonon, defect, grain-
boundary, and dislocation scatterings. Scandium nitride (ScN), an emerging rocksalt indirect …
boundary, and dislocation scatterings. Scandium nitride (ScN), an emerging rocksalt indirect …
Thermal conductivity of (Zr, W) N/ScN metal/semiconductor multilayers and superlattices
The cross-plane thermal conductivities of metal/semiconductor multilayers and epitaxial
superlattices have been measured as a function of period by time-domain thermoreflectance …
superlattices have been measured as a function of period by time-domain thermoreflectance …
Surface and bulk electronic structure of investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy
ScN (001) 1× 1 surfaces have been prepared by growing ScN on MgO (001) using radio
frequency molecular beam epitaxy. In situ ultrahigh vacuum scanning tunneling …
frequency molecular beam epitaxy. In situ ultrahigh vacuum scanning tunneling …