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GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
R ON degradation due to stress in GaN-based power devices is a critical issue that limits,
among other effects, long-term stable operation. Here, by means of 2-D device simulations …
among other effects, long-term stable operation. Here, by means of 2-D device simulations …
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs
Dynamic dispersion due to buffer traps is a well-known issue of GaN power high electron
mobility transistors (HEMTs), critically impacting their performance and stability. Several …
mobility transistors (HEMTs), critically impacting their performance and stability. Several …
The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC
In this study, the reliability issues are discussed under dc and ac negative gate bias stress
(ac-NGBS) in Al2O3/Si3N4 metal–insulator–semiconductor high electron mobility transistors …
(ac-NGBS) in Al2O3/Si3N4 metal–insulator–semiconductor high electron mobility transistors …
[HTML][HTML] On the modeling of the donor/acceptor compensation ratio in carbon-doped GaN to univocally reproduce breakdown voltage and current collapse in lateral …
The intentional do** of lateral GaN power high electron mobility transistors (HEMTs) with
carbon (C) impurities is a common technique to reduce buffer conductivity and increase …
carbon (C) impurities is a common technique to reduce buffer conductivity and increase …
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs
In this brief, we investigate the bidirectional threshold voltage drift (ΔV T) following negative-
bias temperature instability (NBTI) stress in carbon-doped fully recessed AlGaN/GaN metal …
bias temperature instability (NBTI) stress in carbon-doped fully recessed AlGaN/GaN metal …
Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs
In this paper, we investigate the influence of Poole–Frenkel effect (PFE) on the dynamic R
ON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the …
ON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the …
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications
Thanks to high-current densities and cutoff frequencies, short-channel length AlGaN/GaN
HEMTs are a promising technology solution for implementing RF power amplifiers in 5G …
HEMTs are a promising technology solution for implementing RF power amplifiers in 5G …
Influence of carbon on pBTI degradation in GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, threshold-voltage V TH instabilities under positive gate voltage stress V
GStress in GaN-on-Si devices are thoroughly investigated. Measurement-stress …
GStress in GaN-on-Si devices are thoroughly investigated. Measurement-stress …
Study on the difference between ID (VG) and C (VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
In this study, we investigate the difference between ID (VG) and C (VG) pBTI shifts on GaN-
on-Si E-mode MOS-channel HEMTs, under various gate voltage stresses (V GStress) and …
on-Si E-mode MOS-channel HEMTs, under various gate voltage stresses (V GStress) and …