Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Germanium-based integrated photonics from near-to mid-infrared applications
Germanium (Ge) has played a key role in silicon photonics as an enabling material for
datacom applications. Indeed, the unique properties of Ge have been leveraged to develop …
datacom applications. Indeed, the unique properties of Ge have been leveraged to develop …
Recent progress in silicon photonics: a review
With the increasing bandwidth requirement in computing and signal processing, the inherent
limitations in metallic interconnection are seriously threatening the future of traditional IC …
limitations in metallic interconnection are seriously threatening the future of traditional IC …
Integrated germanium optical interconnects on silicon substrates
Monolithic integration of optoelectronics with electronics is a much-desired functionality.
Here, we demonstrate that it is possible to realize low-loss Ge quantum-well photonic …
Here, we demonstrate that it is possible to realize low-loss Ge quantum-well photonic …
23 GHz Ge/SiGe multiple quantum well electro-absorption modulator
We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-
absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally …
absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally …
[HTML][HTML] Recent progress on Ge/SiGe quantum well optical modulators, detectors, and emitters for optical interconnects
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3 μm
MS Rouifed, D Marris-Morini… - IEEE Journal of …, 2013 - ieeexplore.ieee.org
The paper reports on the developments of Ge/SiGe quantum well (QW) waveguide
modulators operating at 1.3 μm. Two modulator configurations have been studied: The first …
modulators operating at 1.3 μm. Two modulator configurations have been studied: The first …
[کتاب][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …
Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
We demonstrate electroabsorption contrast greater than 5 dB over the entire
telecommunication S-and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy …
telecommunication S-and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy …
Modulation of the absorption coefficient at in Ge/SiGe multiple quantum well heterostructures on silicon
We report modulation of the absorption coefficient at 1.3? μm in Ge/SiGe multiple quantum
well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering …
well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering …
Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers
We report on the observation of room temperature direct band gap photoluminescence in
compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed …
compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed …