This study focused on the complex dielectric-constant (ε*= ε′-jε''), complex electrical-
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …

In this our study, we fabricated an Al/p-Si metal semiconductor (MS) structure with
perylenetetra carboxylic dianhydride (PTCDA) and graphene oxide (GO) interface. The …

In this study, lithium fluoride (LiF) was employed as an interface material by thermal
evaporation technique and its effect of on basic device parameters such as Schottky barrier …

The purpose of this study is to investigate the electric and dielectric properties of Au/Ti/AlN/n-
Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on …

Abstract Monocrystalline Germanium quantum dots (Ge QDs), grown by molecular beam
epitaxy (MBE), are intricately embedded within a SiO 2 oxide layer of a metal-insulator …

In this study, the electrical properties of Au/(SnS doped PVC)/n–Si structures were
investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by …

The investigation reports on fabrication and measurements of heterojunction diode based
on ZnO layer. The layers are ultrasonic sprayed onto p-type silicon substrates at 350​° C …

We investigate the dark current-voltage properties of P3HT: PCBM based solar cell at
different temperatures. The experimental data were fitted using two methods: Analytical …

In this work, the temperature-dependent parameters of Ni/β-Ga 2 O 3 Schottky barrier diode
(SBD) were analyzed and modeled. The simulation is to elucidate the physical phenomenon …

The ability to detect ultraviolet light is crucial for various applications such as energy
harvesting, environmental monitoring, sensing, and ultraviolet astronomy. In this paper, we …