Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …

Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

Hardware implementation of artificial synaptic devices that emulate the functions of
biological synapses is inspired by the biological neuromorphic system and has drawn …

Topotactic transition is a structural phase change in a matrix crystal lattice mediated by the
ordered loss/gain and rearrangement of atoms, leading to unusual coordination …

Distinct from the conductive filament-type counterparts, the interface-type resistive switching
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …

Point defects, such as oxygen vacancies, control the physical properties of complex oxides,
relevant in active areas of research from superconductivity to resistive memory to catalysis …

Redox‐based memristive devices are one of the most attractive candidates for future
nonvolatile memory applications and neuromorphic circuits, and their performance is …

Memristive devices have been a hot topic in nanoelectronics for the last two decades in both
academia and industry. Originally proposed as digital (binary) nonvolatile random access …

The vacancy distribution of oxygen and its dynamics directly affect the functional response of
complex oxides and their potential applications. Dynamic control of the oxygen composition …

Resistive switching (RS) memory has stayed at the forefront of next‐generation nonvolatile
memory technologies. Recently, a novel class of transition metal oxides (TMOs), which …