Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities

W Li, J Shi, KHL Zhang, JL MacManus-Driscoll - Materials Horizons, 2020 - pubs.rsc.org
Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …

[HTML][HTML] Ultra-thin ferroelectrics

H Qiao, C Wang, WS Choi, MH Park, Y Kim - Materials Science and …, 2021 - Elsevier
Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

A ferrite synaptic transistor with topotactic transformation

C Ge, C Liu, Q Zhou, Q Zhang, J Du, J Li… - Advanced …, 2019 - Wiley Online Library
Hardware implementation of artificial synaptic devices that emulate the functions of
biological synapses is inspired by the biological neuromorphic system and has drawn …

An electroforming-free, analog interface-type memristor based on a SrFeOx epitaxial heterojunction for neuromorphic computing

J Rao, Z Fan, L Hong, S Cheng, Q Huang, J Zhao… - Materials Today …, 2021 - Elsevier
Distinct from the conductive filament-type counterparts, the interface-type resistive switching
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …

Hydrogarnet-Derived Porous Polyhedral Particles of SrFeO3-δ Perovskite

H Otaguro, T Takeno, R Sugimoto… - Chemistry of …, 2023 - ACS Publications
Introduction of open mesoporosity into microparticles with a robust morphology provides a
high active surface area together with good thermal stability and shows benefit in various …

Carrier localization in perovskite nickelates from oxygen vacancies

M Kotiuga, Z Zhang, J Li, F Rodolakis… - Proceedings of the …, 2019 - National Acad Sciences
Point defects, such as oxygen vacancies, control the physical properties of complex oxides,
relevant in active areas of research from superconductivity to resistive memory to catalysis …

[HTML][HTML] Progress in atomic-resolution aberration corrected conventional transmission electron microscopy (CTEM)

KW Urban, J Barthel, L Houben, CL Jia, L **… - Progress in Materials …, 2023 - Elsevier
Transmission electron microscopy is an indispensable tool in modern materials science. It
enables the structure of materials to be studied with high spatial resolution, and thus makes …

Redox-based memristive devices for new computing paradigm

R Dittmann, JP Strachan - APL materials, 2019 - pubs.aip.org
Memristive devices have been a hot topic in nanoelectronics for the last two decades in both
academia and industry. Originally proposed as digital (binary) nonvolatile random access …

Topotactic phase transition driving memristive behavior

VR Nallagatla, T Heisig, C Baeumer, V Feyer… - Advanced …, 2019 - Wiley Online Library
Redox‐based memristive devices are one of the most attractive candidates for future
nonvolatile memory applications and neuromorphic circuits, and their performance is …

Reversible Control of Physical Properties via an Oxygen‐Vacancy‐Driven Topotactic Transition in Epitaxial La0.7Sr0.3MnO3−δ Thin Films

L Cao, O Petracic, P Zakalek, A Weber… - Advanced …, 2019 - Wiley Online Library
The vacancy distribution of oxygen and its dynamics directly affect the functional response of
complex oxides and their potential applications. Dynamic control of the oxygen composition …