The intensity and direction of the electric field effects on off-center shallow-donor impurity binding energy in wedge-shaped cylindrical quantum dots

L Belamkadem, O Mommadi, R Boussetta, S Chouef… - Thin Solid Films, 2022 - Elsevier
Taking into account an infinite confinement potential, including the influence of external
electric field applied in different directions, we have systematically examined the different …

[HTML][HTML] Magnetic field effects on electronic and optical properties in variant toroidal quantum ring: A comparative study of GaN, GaAs, and CdSe materials

R Boussetta, O Mommadi, A El Moussaouy, S Chouef… - Physics Letters A, 2024 - Elsevier
In this work, we have examined the electronic and optical properties of three Variant
Toroidal Quantum Ring (VTQR) materials, GaN, GaAs, and CdSe, in the presence of an …

Impact of combined electric and magnetic fields on the physical properties of GaAs variant quantum ring quarter cross-section in presence of an off-center shallow …

R Boussetta, O Mommadi, M Hbibi, S Chouef… - Journal of Magnetism …, 2024 - Elsevier
In this study, we explored the complex effects of electric fields in three unique directions and
axial magnetic field on a GaAs-Variant Quantum Ring Quarter Cross-Section (VQRQCS) …

Role of Rashba and Dresselhaus spin–orbit interactions on an off-center donor impurity in a Gaussian quantum dot

A Kachu, NR Chebrolu, A Boda - Journal of Magnetism and Magnetic …, 2024 - Elsevier
Abstract The Rashba and Dresselhaus spin–orbit interactions (SOIs) and the magnetic field
effects on off-center hydrogen donor impurity D 0 in a two-dimensional Gaussian GaAs …

Simultaneous effects of hydrostatic pressure and temperature on the electronic spectrum in the presence of a single off-center donor atom in a hemi-quantum ring

R Boussetta, O Mommadi, S Chouef… - Physica B: Condensed …, 2023 - Elsevier
This study numerically investigates the electronic and donor atom properties of an electron
and off-center donor atom confined in a hemi-quantum-ring (HQR) using the effective mass …

Effect of the electric field orientation on Stark shift, dipole moment and electronic properties in a circular toroidal quantum ring: Presence of shallow donor impurity

R Boussetta, O Mommadi, A El Moussaouy… - Physica B: Condensed …, 2024 - Elsevier
This research investigates the influence of electric field orientation on the physical properties
of a Gallium Arsenide (GaAs) Circular Toroidal Quantum Ring (CTQR) in the presence of …

Theoretical investigation of optoelectronic properties in PbS/CdS core/shell spherical quantum dots under the effect of the electric field intensity, hydrogenic impurity …

E Jellouli, N Zeiri, P Baser, N Yahyaoui… - Discover Applied …, 2024 - Springer
In this paper, we theoretically investigated the combined effects of the external electric field
(EF) strength and the geometric parameters on the linear, nonlinear and total dielectric …

[HTML][HTML] Optoelectronic Properties of Shallow Donor Atom in 2D-Curved Nanostructures Under External Electric and Magnetic Fields

S Chouef, M Hbibi, R Boussetta, A El Moussaouy… - Nanomaterials, 2024 - mdpi.com
Using the effective mass approximation and the finite difference method, we examined the
linear, non-linear, and total optical absorption coefficients (OAC), as well as the relative …

Effects of electric and magnetic fields on the electronic properties in the asymmetrical biconvex lens-shaped GaAs/GaAlAs quantum dots

EB Al, RL Restrepo, AL Morales, F Mora-Rey… - Physica B: Condensed …, 2024 - Elsevier
Theoretical investigation of electronic properties in asymmetric biconvex lens-shaped
GaAs/GaAlAs quantum dots is considered in the presence of the external magnetic and …

Optical Properties of Three‐Electron GaAs/AlxGa1−xAs QDs with Finite Confinement Potential

Y Yakar, B Çakır, A Özmen - Advanced Theory and Simulations, 2024 - Wiley Online Library
In the case of finite confinement potential, the average energies and corresponding wave
functions for the 1s2nl configurations, in which nl= 2s, 2p, 3d, and 4f, of three‐electron …