GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Vertical GaN power devices: Device principles and fabrication technologies—Part I
Recent years have witnessed a tremendous development of vertical gallium nitride (GaN)
power devices, a new class of device technology that could be the key enabler for next …
power devices, a new class of device technology that could be the key enabler for next …
Power device breakdown mechanism and characterization: Review and perspective
Breakdown voltage (BV) is arguably one of the most critical parameters for power devices.
While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking …
While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking …
Impact ionization coefficients and critical electric field in GaN
Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction
diode are experimentally investigated at 223–373 K by novel photomultiplication …
diode are experimentally investigated at 223–373 K by novel photomultiplication …
Demonstration of> 6.0-kV breakdown voltage in large area vertical GaN pn diodes with step-etched junction termination extensions
Vertical gallium nitride (GaN) pn diodes have garnered significant interest for use in power
electronics where high-voltage blocking and high-power efficiency are of concern. In this …
electronics where high-voltage blocking and high-power efficiency are of concern. In this …
Robust avalanche in 1.7 kV vertical GaN diodes with a single-implant bevel edge termination
This work demonstrates a novel junction termination extension (JTE) with a graded charge
profile for vertical GaN pn diodes. The fabrication of this JTE obviates GaN etch and requires …
profile for vertical GaN pn diodes. The fabrication of this JTE obviates GaN etch and requires …
Vertical GaN power devices: Device principles and fabrication technologies—Part II
Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic
devices and systems with higher energy efficiency, higher power density, faster switching …
devices and systems with higher energy efficiency, higher power density, faster switching …
High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination
X Guo, Y Zhong, J He, Y Zhou, S Su… - IEEE Electron …, 2021 - ieeexplore.ieee.org
A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was successfully
fabricated by using a high-quality n--GaN drift layer with a precisely-controlled n-type …
fabricated by using a high-quality n--GaN drift layer with a precisely-controlled n-type …
Performance limits of vertical unipolar power devices in GaN and 4H-SiC
GaN and 4H-SiC are emerging wide-bandgap semiconductors that have unipolar power-
device figuresof-merit 350-400× higher than silicon, but precise design and performance …
device figuresof-merit 350-400× higher than silicon, but precise design and performance …
Analysis of the dependence of critical electric field on semiconductor bandgap
O Slobodyan, J Flicker, J Dickerson… - Journal of Materials …, 2022 - Springer
Understanding of semiconductor breakdown under high electric fields is an important aspect
of materials' properties, particularly for the design of power devices. For decades, a power …
of materials' properties, particularly for the design of power devices. For decades, a power …