This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers employing NiO layer extension
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …

Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …

Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …

The heat dissipation issue has now become one of the most important bottlenecks for power
electronics due to the rapid increase in power density and working frequency. Towards the …

The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …