Crystalline silicon (c-Si) photovoltaics has long been considered energy intensive and
costly. Over the past decades, spectacular improvements along the manufacturing chain …

The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based
technologies with heavily doped, directly metallized contacts. Recombination of photo …

In the first part of this paper, we review the developments which led to the present state-of-
the-art in the surface passivation of today's industrially predominant dopant-diffused …

High-efficiency silicon solar cells strongly rely on an effective reduction of charge carrier
recombination at their surfaces, ie surface passivation. Today's industrial silicon solar cells …

Solar photovoltaics researchers have devoted enough time to improve the performance of
various types of high efficiency crystalline silicon based solar cells including passivated …

Passivating contacts based on poly‐Si/SiOx structures also known as TOPCon (tunnel oxide
passivated contacts) have a great potential to improve the efficiency of crystalline silicon …

By applying an interdigitated back contacted solar cell concept with poly-Si on oxide
passivating contacts an efficiency of 26.1% was achieved recently. In this paper the impact …

The carrier transport through the silicon-oxide (SiO x) layer in tunnel oxide passivated
contact (TOPCon) c-Si solar cells has been studied experimentally and by simulation. The …

Stacks consisting of an ultrathin SiO 2 coated with atomic-layer deposited (ALD) zinc oxide
(ZnO) and aluminum oxide (Al 2 O 3) have been shown to yield state-of-the-art passivation …

We develop a plasma-assisted nitrous-oxide (N 2 O) gas oxidation (PANO) method to
prepare the ultrathin silicon oxide (SiO x) for polysilicon (poly-Si) passivated contact. The …