Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …

In this work, we introduce the Object Kinetic Monte Carlo (OKMC) simulator MMonCa and
simulate the defect evolution in three different materials. We start by explaining the theory of …

The thermal properties of semiconductors following exposure to ion irradiation are of great
interest for the cooling of electronic devices; however, gradients in composition and structure …

The development of advanced semiconductor devices relies heavily on technology
computer-aided design. Front-end process simulators model the fabrication of devices …

Traditional understanding of the thermal boundary resistance (TBR) across solid-solid
interfaces posits that the vibrational densities of states overlap between materials dictates …

Ion implantation induced damage accumulation is crucial to the simulation of silicon
processing. We present a physically based damage accumulation model, implemented in a …

Defect–carrier interactions, especially carrier capture of defects (defect charging), are crucial
for understanding displacement damage and failure mechanisms of semiconductor devices …

This work shows a comprehensive atomistic model to describe amorphization and
recrystallization, and its different effects on dopants in silicon. We begin by describing the …

Multi-scale simulations have emerged as a promising tool for modelling displacement
damage in silicon in recent years. In the current work, binary collision approximation (BCA) …

Based on the previously proposed diffusion-coagulation model of defect formation under the
ion irradiation of silicon using the numerical solution of the corresponding kinetic equations …