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Defect engineering in SiC technology for high-voltage power devices
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Material science and device physics in SiC technology for high-voltage power devices
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Ga 2 O 3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers …
We investigated the temperature-dependent electrical properties of Pt/Ga 2 O 3 Schottky
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2 …
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2 …
First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes
K Sasaki, D Wakimoto, QT Thieu… - IEEE Electron …, 2017 - ieeexplore.ieee.org
We developed β-Ga 2 O 3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first
time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy on a single-crystal …
time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy on a single-crystal …
Recent progress of GaN power devices for automotive applications
T Kachi - Japanese Journal of Applied Physics, 2014 - iopscience.iop.org
Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs).
To improve the efficiency of HVs and EVs, better performance characteristics than those of Si …
To improve the efficiency of HVs and EVs, better performance characteristics than those of Si …
Large-size (1.7× 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio
F Otsuka, H Miyamoto, A Takatsuka… - Applied Physics …, 2021 - iopscience.iop.org
We fabricated high forward and low leakage current trench MOS-type Schottky barrier
diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown …
diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
SiC and GaN devices–wide bandgap is not all the same
Silicon carbide (SiC)‐diodes have been commercially available since 2001 and various SiC‐
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
High-Voltage and High- Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination
We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …