Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
O Supplie, O Romanyuk, C Koppka, M Steidl… - Progress in Crystal …, 2018 - Elsevier
The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …
since it is strongly desired in various high-efficiency applications ranging from …
Advanced electron microscopy for III/V on silicon integration
The combination of III/V semiconductors with Si is very attractive, since it allows the
fabrication of high efficient optoelectronic devices like solar cells, lasers or the integration of …
fabrication of high efficient optoelectronic devices like solar cells, lasers or the integration of …
[LIBRO][B] Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
S Irvine, P Capper - 2019 - books.google.com
Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
MOVPE grown gallium phosphide–silicon heterojunction solar cells
Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to
its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p …
its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p …
Epitaxial III–V films and surfaces for photoelectrocatalysis
Efficient photoelectrochemical devices for water splitting benefit from the highest material
quality and dedicated surface preparation achieved by epitaxial growth. InP (100)‐based …
quality and dedicated surface preparation achieved by epitaxial growth. InP (100)‐based …
Atomic and electronic structure of GaP/Si (111), GaP/Si (110), and GaP/Si (113) interfaces and superlattices studied by density functional theory
O Romanyuk, T Hannappel, F Grosse - Physical Review B—Condensed Matter …, 2013 - APS
The atomic structure of GaP (111)/Si (111), GaP (110)/Si (110), and GaP (113)/Si (113)
heterointerfaces was studied by ab initio calculations employing the density functional …
heterointerfaces was studied by ab initio calculations employing the density functional …
Correlation of early-stage growth process conditions with dislocation evolution in MOCVD-based GaP/Si heteroepitaxy
To identify the complex relationships between early-stage growth processes and the
resultant defect microstructure in GaP/Si heteroepitaxy, a holistic study of several key metal …
resultant defect microstructure in GaP/Si heteroepitaxy, a holistic study of several key metal …
Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si (100)
Energy storage is a key challenge in solar-driven renewable energy conversion. We
promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si …
promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si …
Indirect in situ characterization of Si (1 0 0) substrates at the initial stage of III–V heteroepitaxy
For an indirect in situ quantification of Si (100) surface reconstruction domains, we
characterized the anti-phase disorder of thin, pseudomorphic gallium phosphide films after …
characterized the anti-phase disorder of thin, pseudomorphic gallium phosphide films after …
III–V on silicon: Observation of gallium phosphide anti-phase disorder by low-energy electron microscopy
H Döscher, B Borkenhagen, G Lilienkamp, W Daum… - Surface science, 2011 - Elsevier
The formation of anti-phase disorder is a major obstacle in the heteroepitaxy of III–V
semiconductors on silicon. For an investigation of the anti-phase domain (APD) structure of …
semiconductors on silicon. For an investigation of the anti-phase domain (APD) structure of …