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Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-do**
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their
exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization …
exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization …
Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications
W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …
point of both the fundamentals and the applications. In this review article, the current …
Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices
Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions,
and field-effect transistors are considered among the most promising candidates for …
and field-effect transistors are considered among the most promising candidates for …
Stabilizing the Ferroelectric Phase of Thin Films by Charge Transfer
S Shi, T Cao, H ** and epitaxial stress to polarization in ferroelectric HfO2 films
Literature is rich on the study of different strategies to tailor ferroelectric properties of HfO 2.
Among them, chemical do** is the most studied. La doped HfO 2 films have attracted …
Among them, chemical do** is the most studied. La doped HfO 2 films have attracted …
Microstructural evolution and ferroelectricity in HfO2 films
Ferroelectric (FE) materials, which typically adopt the perovskite structure with non-
centrosymmetry and exhibit spontaneous polarization, are promising for applications in …
centrosymmetry and exhibit spontaneous polarization, are promising for applications in …
Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films
The groundbreaking discovery of unconventional ferroelectricity in HfO2 opens exciting
prospects for next‐generation memory devices. However, the practical implementation …
prospects for next‐generation memory devices. However, the practical implementation …
Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications
HB Chen, CH Hsu, WY Wu, WZ Zhang, J Zhang… - Applied Surface …, 2024 - Elsevier
Aluminum incorporated hafnium oxide (HfAlO) has garnered significant attention due to its
high dielectric constant. The present study employs supercycle plasma-enhanced atomic …
high dielectric constant. The present study employs supercycle plasma-enhanced atomic …