A GHz operating CMOS compatible ScAlN based SAW resonator used for surface acoustic waves/spin waves coupling

I Zdru, C Nastase, LN Hess, F Ciubotaru… - IEEE Electron …, 2022 - ieeexplore.ieee.org
ScAlN/Si, a CMOS compatible material, was used to manufacture GHz operating surface
acoustic wave devices, targeting manipulation and control of spin waves via SAW devices. A …

GaN Surface Acoustic Wave Resonaters on Si Substrate for RF Applications

L Wang, S Chen, W **ng, Z Liu, H Du… - … Conference on IC …, 2024 - ieeexplore.ieee.org
In this manuscript, we demonstrated GaN/Si Surface Acoustic Wave (SAW) resonators on
AlGaN/GaN heterostructure grown on Si substrate, and investigated the impact of the …

Asymmetric Acoustic Driven Ferromagnetic Resonance on ScAlN/Si Based Structures

MC Ciornei, A Florescu, M Nedelcu… - 2024 International …, 2024 - ieeexplore.ieee.org
An experimental study is made on acoustic driven ferromagnetic resonance in Ni/Pt bi-layers
placed in-between the interdigital transducers of ScAlN/Si surface acoustic wave based …

Spin Waves Coupling

I Zdru, C Nastase, L Hess, F Ciubotaru, A Nicoloiu… - Authorea …, 2023 - techrxiv.org
A thin ScAlN layer was deposited on high resistivity (111) oriented silicon and two port
surface acoustic wave (SAW) devices were manufactured, using advanced nanolithographic …

压电 AlN MEMS 的新进展 (续).

赵**** - Micronanoelectronic Technology, 2024 - search.ebscohost.com
Si 基微电子机械系统(MEMS) 经过三十余年的发展已进入智能微系统的发展阶段,
已成为当今MEMS 技术创新发展的主流. 当今半导体材料技术的科研已进入超宽禁带半导体的 …