We report complementary metal–oxide–semiconductor (CMOS)-compatible integration of
compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively …

Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing
phenomena. Examples include three-dimensional island formation, injection of dislocations …

Ge vertical heterostructures grown on deeply-patterned Si (001) were first obtained in 2012
(CV Falub et al., Science 2012, 335, 1330–1334), immediately capturing attention due to the …

Defect-free mismatched heterostructures on Si substrates are produced by an innovative
strategy. The strain relaxation is engineered to occur elastically rather than plastically by …

Crystal lattice deformations can be described microscopically by explicitly accounting for the
position of atoms or macroscopically by continuum elasticity. In this work, we report on the …

We investigate the temperature dependence of the Ge Raman mode strain–phonon
coefficient in Ge/Si heteroepitaxial layers. By analyzing the temperature‐dependent …

The integration of dislocation-free Ge nano-islands was realized via selective molecular
beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular …

Dislocation networks are one of the most principle sources deteriorating the performances of
devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a …

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a
central topic in (opto-) electronics owing to device applications. InP could open new …

We present a theoretical investigation of plasticity onset and strain relaxation in Ge on Si
pillar-like, vertical heterostructures (VHEs). By means of linear elasticity theory solved by …