Review of self-powered solar-blind photodetectors based on Ga2O3
C Wu, F Wu, H Hu, S Wang, A Liu, D Guo - Materials Today Physics, 2022 - Elsevier
Due to the broad potential applications range in both military and civilian domains, solar-
blind photodetectors based on the ultrawide-bandgap semiconductor Ga 2 O 3, with high …
blind photodetectors based on the ultrawide-bandgap semiconductor Ga 2 O 3, with high …
A strategic review on gallium oxide based deep‐ultraviolet photodetectors: recent progress and future prospects
With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it
has become imperative to have health safety systems in place to curb the ill‐effects on …
has become imperative to have health safety systems in place to curb the ill‐effects on …
A general strategy to ultrasensitive Ga2O3 based self-powered solar-blind photodetectors
C Wu, F Wu, C Ma, S Li, A Liu, X Yang, Y Chen… - Materials Today …, 2022 - Elsevier
Ga 2 O 3 based self-powered photodetectors, which can work in photovoltaic mode, show
great potential applications in the next-generation photodetectors. Due to the difficulty of p …
great potential applications in the next-generation photodetectors. Due to the difficulty of p …
Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction
Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is
attracting much attention due to their potential civilian and military applications. The …
attracting much attention due to their potential civilian and military applications. The …
Comprehensive Study on Ultra-Wide Band Gap La2O3/ε-Ga2O3 p–n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing
Solar-blind UV photodetectors have outstanding reliability and sensitivity in flame detection
without interference from other signals and response quickly. Herein, we fabricated a solar …
without interference from other signals and response quickly. Herein, we fabricated a solar …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
Enhanced Performance of Gallium‐Based Wide Bandgap Oxide Semiconductor Heterojunction Photodetector for Solar‐Blind Optical Communication via Oxygen …
C Wu, T Zhao, H He, H Hu, Z Liu… - Advanced Optical …, 2024 - Wiley Online Library
Gallium oxide (β‐Ga2O3) is a prominent representative of the new generation of wide‐
bandgap semiconductors, boasting a bandgap of≈ 4.9 eV. However, the growth process of …
bandgap semiconductors, boasting a bandgap of≈ 4.9 eV. However, the growth process of …
Broadband Ultraviolet Self-Powered Photodetector Constructed on Exfoliated β-Ga2O3/CuI Core–Shell Microwire Heterojunction with Superior Reliability
A heterojunction is an essential strategy for multispectral energy-conservation
photodetection for its ability to separate photogenerated electron–hole pairs and tune the …
photodetection for its ability to separate photogenerated electron–hole pairs and tune the …
p-GaSe/n-Ga2O3 van der Waals Heterostructure Photodetector at Solar-Blind Wavelengths with Ultrahigh Responsivity and Detectivity
Ga2O3 with a suitable bandgap width is emerging to be a novel candidate for future
optoelectronic applications in the solar-blind region (< 280 nm). Herein, solar-blind …
optoelectronic applications in the solar-blind region (< 280 nm). Herein, solar-blind …
Plasmonic Pt nanoparticles triggered efficient charge separation in TiO2/GaN NRs hybrid heterojunction for the high performance self-powered UV photodetectors
Solar radiation, especially the UV-A light rays (320–400 nm) exposure causes severe health
hazard such as skin-related cancer and premature aging. Owing to the significance of UV-A …
hazard such as skin-related cancer and premature aging. Owing to the significance of UV-A …