Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters—A review

Y Avenas, L Dupont, Z Khatir - IEEE transactions on power …, 2011 - ieeexplore.ieee.org
This paper proposes a synthesis of different electrical methods used to estimate the
temperature of power semiconductor devices. The following measurement methods are …

Improved reliability of power modules: A review of online junction temperature measurement methods

N Baker, M Liserre, L Dupont… - IEEE Industrial …, 2014 - ieeexplore.ieee.org
Power electronic systems play an increasingly important role in providing high-efficiency
power conversion for adjustable-speed drives, power-quality correction, renewable-energy …

Junction temperature extraction approach with turn-off delay time for high-voltage high-power IGBT modules

H Luo, Y Chen, P Sun, W Li, X He - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the
junction temperature extraction and prediction of power semiconductor devices. In this …

Review of power semiconductor device reliability for power converters

B Wang, J Cai, X Du, L Zhou - CPSS Transactions on Power …, 2017 - ieeexplore.ieee.org
The investigation shows that power semiconductor devices are the most fragile components
of power electronic systems. Improving the reliability of power devices is the basis of a …

Monitoring, diagnosis, and power forecasting for photovoltaic fields: A review

S Daliento, A Chouder, P Guerriero… - International Journal …, 2017 - Wiley Online Library
A wide literature review of recent advance on monitoring, diagnosis, and power forecasting
for photovoltaic systems is presented in this paper. Research contributions are classified into …

Real-time measurement of temperature sensitive electrical parameters in SiC power MOSFETs

A Griffo, J Wang, K Colombage… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper examines a number of techniques for junction temperature estimation of silicon
carbide (SiC) MOSFET s devices based on the measurement of temperature sensitive …

Reviewing thermal-monitoring techniques for smart power modules

S Kalker, LA Ruppert… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
The increasing demand for higher power device utilization and reliability in power electronic
systems is driving the integration of condition monitoring and active control in power …

Real-time temperature estimation for power MOSFETs considering thermal aging effects

H Chen, B Ji, V Pickert, W Cao - IEEE Transactions on Device …, 2013 - ieeexplore.ieee.org
This paper presents a novel real-time power-device temperature estimation method that
monitors the power MOSFET's junction temperature shift arising from thermal aging effects …

A review of DC fast chargers with BESS for electric vehicles: Topology, battery, reliability oriented control and cooling perspectives

H Polat, F Hosseinabadi, MM Hasan, S Chakraborty… - Batteries, 2023 - mdpi.com
The global promotion of electric vehicles (EVs) through various incentives has led to a
significant increase in their sales. However, the prolonged charging duration remains a …

Ensuring a reliable operation of two-level IGBT-based power converters: A review of monitoring and fault-tolerant approaches

K Hu, Z Liu, Y Yang, F Iannuzzo, F Blaabjerg - IEEE Access, 2020 - ieeexplore.ieee.org
Despite the emerging multi-phase and multi-level converters, two-level insulated gate
bipolar transistor-based power converters are still widely used in industrial applications in …