Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Conventional artificial intelligence (AI) machine vision technology, based on the von
Neumann architecture, uses separate sensing, computing, and storage units to process …

Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

Ferroelectric Al 1− x Sc x N has raised much interest in recent years due to its unique
ferroelectric properties and complementary metal oxide semiconductor back-end-of-line …

Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …

Costly data movement in terms of time and energy in traditional von Neumann systems is
exacerbated by emerging information technologies related to artificial intelligence. In …

Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to
its unique properties. The wurtzite-structure AlScN is compatible with the complementary …

The integration of ferroelectric hafnium oxide (HfO2) into semiconductor device structures
has been a breakthrough in the development of state-of-the-art in-memory computing (IMC) …