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Efficient UV photodetectors based on Ni-doped ZnS nanoparticles prepared by facial chemical reduction method
Ni-doped ZnS nanoparticles are synthesized by simple hydrothermal process for the
utilization in UV photodetectors. Surface morphology of the prepared samples is …
utilization in UV photodetectors. Surface morphology of the prepared samples is …
Structural, optical and electronic structure studies of Al doped ZnO thin films
Structural, optical and electronic structure of Al doped ZnO thin films grown using pulsed
laser deposition on glass substrate are investigated. X-ray diffraction measurements reveal …
laser deposition on glass substrate are investigated. X-ray diffraction measurements reveal …
Quantum efficient fast UV photodetectors based on nanocrystalline Zn1-xPxO (x= 0.00, 0.03, 0.07) thin films deposited by pulsed laser deposition technique
Here, we demonstrate the effect of phosphorous do** concentration on the structural,
electrical and optical properties of ZnO thin films deposited by pulse laser deposition …
electrical and optical properties of ZnO thin films deposited by pulse laser deposition …
Boron phosphide as the buffer-layer for the epitaxial III-nitride growth: a theoretical study
We present our preliminary results of a systematic theoretical study of the adsorption of N
and Ga over boron phosphide (BP)(100)(2× 1) surfaces. We have analyzed the changes in …
and Ga over boron phosphide (BP)(100)(2× 1) surfaces. We have analyzed the changes in …
Theoretical studies of structural, elastic, electronic and lattice dynamic properties of AlxYyB1− x− yN quaternary alloys
A theoretical study on the structural, elastic, electronic and lattice dynamic properties of Al x
Y y B 1− x− y N quaternary alloys in zinc-blend phase has been carried out with first …
Y y B 1− x− y N quaternary alloys in zinc-blend phase has been carried out with first …
Pressure‐induced phase transitions and polytypic structures in III‐Nitrides
In this work, we have calculated ab initio the equation of state for the rocksalt, zincblende,
wurtzite, 4H and 6H hexagonal modifications of GaN and InN, as well as both the wurtzite‐to …
wurtzite, 4H and 6H hexagonal modifications of GaN and InN, as well as both the wurtzite‐to …
Theoretical investigations of physical properties of AlxScyB1− x− yN quaternary alloys
A computed investigation on the structural, elastic, electronic, phonon frequencies and
thermal properties of Al x Sc y B 1− x− y N quaternary alloys in the zinc-blend phase has …
thermal properties of Al x Sc y B 1− x− y N quaternary alloys in the zinc-blend phase has …
Droop improvement in InGaN/GaN light-emitting diodes by polarization do** of quantum wells and electron blocking layer
-Polarization do** in quantum wells and electron blocking layer is proposed to improve
the emission intensity and efficiency droop of InGaN light-emitting diodes (LEDs). Band …
the emission intensity and efficiency droop of InGaN light-emitting diodes (LEDs). Band …
[PDF][PDF] Phonon Mean Free Path and Thermal Conductivity Relation for Gallium Nitride
It is important to know the mean free path of dominant energy carriers in materials when
nanoscale heat transfer effects exist in devices. High electron mobility transistors from …
nanoscale heat transfer effects exist in devices. High electron mobility transistors from …
Phonons and their pressure dependence of MnAs and MnN by ab initio calculations
In this work, theoretical results for the equation of state, the phonon dispersions and their
pressure dependence of MnAs and MnN are presented. The results show that the inclusion …
pressure dependence of MnAs and MnN are presented. The results show that the inclusion …