This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two‐
dimensional systems made of zinc‐blende III–V, wurtzite, and SiGe semiconductors. We …

The development of optoelectronic devices requires breakthroughs in new material systems
and novel device mechanisms, and the demand recently changes from the detection of …

Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN
low-dimensional structures excited by terahertz radiation. The structures are shown to …

Using group theory and Kane-type k⋅ p model together with the Löwdin partition method,
we derive the expressions for the spin-orbit coupling of electrons and holes, including the …

Employing the spin degree of freedom of charge carriers offers the possibility to extend the
functionality of conventional electronic devices, while colloidal chemistry can be used to …

The spin splitting in GaN-based heterostructures has been investigated by means of circular
photogalvanic effect experiments under uniaxial strain. The ratios of Rashba and …

Dirac semimetal (DSM) Cd3As2 has drawn great attention for exploring the novel quantum
phenomena and high-speed optoelectronic applications. The circular photogalvanic effect …

Under normal incidence of circularly polarized light at room temperature, a charge current
with swirly distribution has been observed in the two-dimensional electron gas in Al 0.25 Ga …

This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility
transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional …