Considerations for ultimate CMOS scaling
KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
Academic and industry research progress in germanium nanodevices
R Pillarisetty - Nature, 2011 - nature.com
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first
material used in such devices. During the 1950s, just after the birth of the transistor, solid …
material used in such devices. During the 1950s, just after the birth of the transistor, solid …
Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
[HTML][HTML] Berberine protects against 6-OHDA-induced neurotoxicity in PC12 cells and zebrafish through hormetic mechanisms involving PI3K/AKT/Bcl-2 and Nrf2/HO-1 …
Berberine (BBR) is a renowned natural compound that exhibits potent neuroprotective
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …
High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architecture
R Pillarisetty, B Chu-Kung, S Corcoran… - 2010 International …, 2010 - ieeexplore.ieee.org
In this article we demonstrate a Ge p-channel QWFET with scaled TOXE= 14.5 Å and
mobility of 770 cm 2/V* s at ns= 5× 10 12 cm-2 (charge density in the state-of-the-art Si …
mobility of 770 cm 2/V* s at ns= 5× 10 12 cm-2 (charge density in the state-of-the-art Si …
Correlated electron materials and field effect transistors for logic: a review
Correlated electron systems are among the centerpieces of modern condensed matter
sciences, where many interesting physical phenomena, such as metal-insulator transition …
sciences, where many interesting physical phenomena, such as metal-insulator transition …
High-Electron-Mobility n-MOSFETs With Two-Step Oxidation
We propose a two-step oxidation with high-pressure oxidation and low-temperature oxygen
annealing to form ideal Ge/GeO 2 stacks based on thermodynamic and kinetic control. The …
annealing to form ideal Ge/GeO 2 stacks based on thermodynamic and kinetic control. The …
GeOI pMOSFETs scaled down to 30-nm gate length with record off-state current
L Hutin, C Le Royer, JF Damlencourt… - IEEE Electron …, 2010 - ieeexplore.ieee.org
We present in this letter the most aggressive dimensions reported to date in Ge-channel
transistors: pMOSFETs with 30-nm gate length on ultrathin germanium-on-insulator …
transistors: pMOSFETs with 30-nm gate length on ultrathin germanium-on-insulator …
Germanium p-channel FinFET fabricated by aspect ratio trap**
We report scaled Ge p-channel FinFETs fabricated on a 300-mm Si wafer using the aspect-
ratio-trap** technique. For long-channel devices, a combination of a trap-assisted …
ratio-trap** technique. For long-channel devices, a combination of a trap-assisted …
Demonstration of scaled Ge p-channel FinFETs integrated on Si
We report the first demonstration of scaled Ge p-channel FinFET devices fabricated on a Si
bulk FinFET baseline using the Aspect-Ratio-Trap** (ART) technique [1]. Excellent …
bulk FinFET baseline using the Aspect-Ratio-Trap** (ART) technique [1]. Excellent …